| KREILIGER, Thomas, Claudiu Valentin FALUB, Fabio ISA, G. ISELLA, D. CHRASTINA, R. BERGAMASCHINI, A. MARZEGALLI, R. KAUFMANN, P. NIEDERMANN, A. NEELS, E. MÜLLER, Mojmír MEDUŇA, Alex DOMMANN, Leo MIGLIO and Hans VON KANEL. Epitaxial Ge-crystal arrays for X-ray detection. Journal of Instrumentation. BRISTOL: IOP PUBLISHING, 2014, vol. 9, March 2014, p. "C03019", 10 pp. ISSN 1748-0221. Available from: https://dx.doi.org/10.1088/1748-0221/9/03/C03019. |
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@article{1174241,
author = {Kreiliger, Thomas and Falub, Claudiu Valentin and Isa, Fabio and Isella, G. and Chrastina, D. and Bergamaschini, R. and Marzegalli, A. and Kaufmann, R. and Niedermann, P. and Neels, A. and Müller, E. and Meduňa, Mojmír and Dommann, Alex and Miglio, Leo and von Kanel, Hans},
article_location = {BRISTOL},
article_number = {March 2014},
doi = {http://dx.doi.org/10.1088/1748-0221/9/03/C03019},
keywords = {Materials for solid-state detectors; Solid state detectors; X-ray detectors},
language = {eng},
issn = {1748-0221},
journal = {Journal of Instrumentation},
title = {Epitaxial Ge-crystal arrays for X-ray detection},
url = {http://iopscience.iop.org/1748-0221/9/03/C03019},
volume = {9},
year = {2014}
}
TY - JOUR
ID - 1174241
AU - Kreiliger, Thomas - Falub, Claudiu Valentin - Isa, Fabio - Isella, G. - Chrastina, D. - Bergamaschini, R. - Marzegalli, A. - Kaufmann, R. - Niedermann, P. - Neels, A. - Müller, E. - Meduňa, Mojmír - Dommann, Alex - Miglio, Leo - von Kanel, Hans
PY - 2014
TI - Epitaxial Ge-crystal arrays for X-ray detection
JF - Journal of Instrumentation
VL - 9
IS - March 2014
SP - "C03019"
EP - "C03019"
PB - IOP PUBLISHING
SN - 17480221
KW - Materials for solid-state detectors
KW - Solid state detectors
KW - X-ray detectors
UR - http://iopscience.iop.org/1748-0221/9/03/C03019
L2 - http://iopscience.iop.org/1748-0221/9/03/C03019
N2 - Monolithic integration of an X-ray absorber layer on a Si CMOS chip might be a potentially attractive way to improve detector performance at acceptable costs. In practice this requires, however, the epitaxial growth of highly mismatched layers on a Si-substrate, both in terms of lattice parameters and thermal expansion coefficients. The generation of extended crystal defects, wafer bowing and layer cracking have so far made it impossible to put the simple concept into practice. Here we present a way in which the difficulties of fabricating very thick, defect-free epitaxial layers may be overcome. It consists of an array of densely packed, three-dimensional Ge-crystals on a patterned Si(001) substrate. The finite gap between neighboring micron-sized crystals prevents layer cracking and substrate bowing, while extended defects are driven to the crystal sidewalls. We show that the Ge-crystals are indeed defect-free, despite the lattice misfit of 4.2%. The electrical characteristics of individual Ge/Si heterojunction diodes are obtained from in-situ measurements inside a scanning electron microscope. The fabrication of monolithically integrated detectors is shown to be compatible with Si-CMOS processing.
ER -
KREILIGER, Thomas, Claudiu Valentin FALUB, Fabio ISA, G. ISELLA, D. CHRASTINA, R. BERGAMASCHINI, A. MARZEGALLI, R. KAUFMANN, P. NIEDERMANN, A. NEELS, E. MÜLLER, Mojmír MEDUŇA, Alex DOMMANN, Leo MIGLIO and Hans VON KANEL. Epitaxial Ge-crystal arrays for X-ray detection. \textit{Journal of Instrumentation}. BRISTOL: IOP PUBLISHING, 2014, vol.~9, March 2014, p.~''C03019'', 10 pp. ISSN~1748-0221. Available from: https://dx.doi.org/10.1088/1748-0221/9/03/C03019.
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