SKÁCELOVÁ, Dana, Monika STUPAVSKÁ, Pavel SŤAHEL and Mirko ČERNÁK. Modification of (111) and (100) silicon in atmospheric pressure plasma. Applied Surface Science. Elsevier Science, 2014, vol. 312, SEPTEMBER, p. 203-207. ISSN 0169-4332. Available from: https://dx.doi.org/10.1016/j.apsusc.2014.05.196. |
Other formats:
BibTeX
LaTeX
RIS
@article{1216357, author = {Skácelová, Dana and Stupavská, Monika and Sťahel, Pavel and Černák, Mirko}, article_number = {SEPTEMBER}, doi = {http://dx.doi.org/10.1016/j.apsusc.2014.05.196}, keywords = {Atmospheric pressure plasma; DCSBD; Crystalline silicon wafer; Plasma activation; Plasma roughening; Wettability}, language = {eng}, issn = {0169-4332}, journal = {Applied Surface Science}, title = {Modification of (111) and (100) silicon in atmospheric pressure plasma}, url = {http://www.sciencedirect.com/science/article/pii/S0169433214009726#}, volume = {312}, year = {2014} }
TY - JOUR ID - 1216357 AU - Skácelová, Dana - Stupavská, Monika - Sťahel, Pavel - Černák, Mirko PY - 2014 TI - Modification of (111) and (100) silicon in atmospheric pressure plasma JF - Applied Surface Science VL - 312 IS - SEPTEMBER SP - 203-207 EP - 203-207 PB - Elsevier Science SN - 01694332 KW - Atmospheric pressure plasma KW - DCSBD KW - Crystalline silicon wafer KW - Plasma activation KW - Plasma roughening KW - Wettability UR - http://www.sciencedirect.com/science/article/pii/S0169433214009726# N2 - In this paper the effect of plasma treatment in dependence of the different crystallographic orientation of silicon surface, (1 0 0) plane and (1 1 1) plane is studied. Plasma treatment was realized in atmospheric pressure plasma generated by diffuse coplanar surface barrier discharge in ambient air. The changes of surface morphology, wettability and chemical structure were investigated by means of the AFM measurement, contact angle measurement and XPS, respectively. It was proved that plasma roughening of c-Si depends on the crystallographic orientation. The wettability of c-Si after plasma treatment was improved independently on the orientation however oxidation of Si surface was also observed. (C) 2014 Elsevier B.V. All rights reserved. ER -
SKÁCELOVÁ, Dana, Monika STUPAVSKÁ, Pavel SŤAHEL and Mirko ČERNÁK. Modification of (111) and (100) silicon in atmospheric pressure plasma. \textit{Applied Surface Science}. Elsevier Science, 2014, vol.~312, SEPTEMBER, p.~203-207. ISSN~0169-4332. Available from: https://dx.doi.org/10.1016/j.apsusc.2014.05.196.
|