SKÁCELOVÁ, Dana, Monika STUPAVSKÁ, Pavel SŤAHEL and Mirko ČERNÁK. Modification of (111) and (100) silicon in atmospheric pressure plasma. Applied Surface Science. Elsevier Science, 2014, vol. 312, SEPTEMBER, p. 203-207. ISSN 0169-4332. Available from: https://dx.doi.org/10.1016/j.apsusc.2014.05.196.
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Basic information
Original name Modification of (111) and (100) silicon in atmospheric pressure plasma
Authors SKÁCELOVÁ, Dana (203 Czech Republic, guarantor, belonging to the institution), Monika STUPAVSKÁ (703 Slovakia, belonging to the institution), Pavel SŤAHEL (203 Czech Republic, belonging to the institution) and Mirko ČERNÁK (703 Slovakia, belonging to the institution).
Edition Applied Surface Science, Elsevier Science, 2014, 0169-4332.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10305 Fluids and plasma physics
Country of publisher Netherlands
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 2.711
RIV identification code RIV/00216224:14310/14:00078284
Organization unit Faculty of Science
Doi http://dx.doi.org/10.1016/j.apsusc.2014.05.196
UT WoS 000339998700037
Keywords in English Atmospheric pressure plasma; DCSBD; Crystalline silicon wafer; Plasma activation; Plasma roughening; Wettability
Tags AKR, rivok
Changed by Changed by: Ing. Andrea Mikešková, učo 137293. Changed: 13/4/2015 14:46.
Abstract
In this paper the effect of plasma treatment in dependence of the different crystallographic orientation of silicon surface, (1 0 0) plane and (1 1 1) plane is studied. Plasma treatment was realized in atmospheric pressure plasma generated by diffuse coplanar surface barrier discharge in ambient air. The changes of surface morphology, wettability and chemical structure were investigated by means of the AFM measurement, contact angle measurement and XPS, respectively. It was proved that plasma roughening of c-Si depends on the crystallographic orientation. The wettability of c-Si after plasma treatment was improved independently on the orientation however oxidation of Si surface was also observed. (C) 2014 Elsevier B.V. All rights reserved.
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ED2.1.00/03.0086, research and development projectName: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy
EE2.3.30.0009, research and development projectName: Zaměstnáním čerstvých absolventů doktorského studia k vědecké excelenci
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