SKÁCELOVÁ, Dana, Petr SLÁDEK, Pavel SŤAHEL, Lukáš PAWERA, Martin HANIČINEC, Jürgen MEISCHNER a Mirko ČERNÁK. Properties of atmospheric pressure plasma oxidized layers on silicon wafers. Open Chemistry. Varšava, Polsko: De Gruyter, 2015, roč. 13, č. 1, s. 376-381. ISSN 2391-5420. Dostupné z: https://dx.doi.org/10.1515/chem-2015-0047. |
Další formáty:
BibTeX
LaTeX
RIS
@article{1220336, author = {Skácelová, Dana and Sládek, Petr and Sťahel, Pavel and Pawera, Lukáš and Haničinec, Martin and Meischner, Jürgen and Černák, Mirko}, article_location = {Varšava, Polsko}, article_number = {1}, doi = {http://dx.doi.org/10.1515/chem-2015-0047}, keywords = {Amorphous silicon oxide; atmospheric pressure plasma; oxidation; DCSBD}, language = {eng}, issn = {2391-5420}, journal = {Open Chemistry}, title = {Properties of atmospheric pressure plasma oxidized layers on silicon wafers}, volume = {13}, year = {2015} }
TY - JOUR ID - 1220336 AU - Skácelová, Dana - Sládek, Petr - Sťahel, Pavel - Pawera, Lukáš - Haničinec, Martin - Meischner, Jürgen - Černák, Mirko PY - 2015 TI - Properties of atmospheric pressure plasma oxidized layers on silicon wafers JF - Open Chemistry VL - 13 IS - 1 SP - 376-381 EP - 376-381 PB - De Gruyter SN - 23915420 KW - Amorphous silicon oxide KW - atmospheric pressure plasma KW - oxidation KW - DCSBD N2 - In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry, infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer. ER -
SKÁCELOVÁ, Dana, Petr SLÁDEK, Pavel SŤAHEL, Lukáš PAWERA, Martin HANIČINEC, Jürgen MEISCHNER a Mirko ČERNÁK. Properties of atmospheric pressure plasma oxidized layers on silicon wafers. \textit{Open Chemistry}. Varšava, Polsko: De Gruyter, 2015, roč.~13, č.~1, s.~376-381. ISSN~2391-5420. Dostupné z: https://dx.doi.org/10.1515/chem-2015-0047.
|