Properties of atmospheric pressure plasma oxidized layers on
silicon wafers

J 2015

Properties of atmospheric pressure plasma oxidized layers on silicon wafers

SKÁCELOVÁ, Dana, Petr SLÁDEK, Pavel SŤAHEL, Lukáš PAWERA, Martin HANIČINEC et. al.

Základní údaje

Originální název

Properties of atmospheric pressure plasma oxidized layers on silicon wafers

Autoři

SKÁCELOVÁ, Dana (203 Česká republika, garant, domácí), Petr SLÁDEK (203 Česká republika, domácí), Pavel SŤAHEL (203 Česká republika, domácí), Lukáš PAWERA (203 Česká republika, domácí), Martin HANIČINEC (203 Česká republika, domácí), Jürgen MEISCHNER (276 Německo) a Mirko ČERNÁK (703 Slovensko, domácí)

Vydání

Open Chemistry, Varšava, Polsko, De Gruyter, 2015, 2391-5420

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10305 Fluids and plasma physics

Stát vydavatele

Polsko

Utajení

není předmětem státního či obchodního tajemství

Kód RIV

RIV/00216224:14310/15:00082344

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1515/chem-2015-0047

UT WoS

000355403100045

Klíčová slova anglicky

Amorphous silicon oxide; atmospheric pressure plasma; oxidation; DCSBD

Štítky

AKR, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 3. 2. 2020 15:11, Dana Nesnídalová

Anotace

V originále

In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry, infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.

Návaznosti

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

SKÁCELOVÁ, Dana, Petr SLÁDEK, Pavel SŤAHEL, Lukáš PAWERA, Martin HANIČINEC, Jürgen MEISCHNER a Mirko ČERNÁK. Properties of atmospheric pressure plasma oxidized layers on silicon wafers. Open Chemistry. Varšava, Polsko: De Gruyter, 2015, roč. 13, č. 1, s. 376-381. ISSN 2391-5420. Dostupné z: https://dx.doi.org/10.1515/chem-2015-0047.

@article{1220336,
   author = {Skácelová, Dana and Sládek, Petr and Sťahel, Pavel and Pawera, Lukáš and Haničinec, Martin and Meischner, Jürgen and Černák, Mirko},
   article_location = {Varšava, Polsko},
   article_number = {1},
   doi = {http://dx.doi.org/10.1515/chem-2015-0047},
   keywords = {Amorphous silicon oxide; atmospheric pressure plasma; oxidation; DCSBD},
   language = {eng},
   issn = {2391-5420},
   journal = {Open Chemistry},
   title = {Properties of atmospheric pressure plasma oxidized layers on silicon wafers},
   volume = {13},
   year = {2015}
}

TY  - JOUR
ID  - 1220336
AU  - Skácelová, Dana - Sládek, Petr - Sťahel, Pavel - Pawera, Lukáš - Haničinec, Martin - Meischner, Jürgen - Černák, Mirko
PY  - 2015
TI  - Properties of atmospheric pressure plasma oxidized layers on silicon wafers
JF  - Open Chemistry
VL  - 13
IS  - 1
SP  - 376-381
EP  - 376-381
PB  - De Gruyter
SN  - 23915420
KW  - Amorphous silicon oxide
KW  - atmospheric pressure plasma
KW  - oxidation
KW  - DCSBD
N2  - In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry, infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.
ER  -

SKÁCELOVÁ, Dana, Petr SLÁDEK, Pavel SŤAHEL, Lukáš PAWERA, Martin HANIČINEC, Jürgen MEISCHNER a Mirko ČERNÁK. Properties of atmospheric pressure plasma oxidized layers on silicon wafers. \textit{Open Chemistry}. Varšava, Polsko: De Gruyter, 2015, roč.~13, č.~1, s.~376-381. ISSN~2391-5420. Dostupné z: https://dx.doi.org/10.1515/chem-2015-0047.

Podrobný výpis o publikaci