GALMIZ, Oleksandr, Monika STUPAVSKÁ, Harm WULFF, Holger KERSTEN, Antonín BRABLEC and Mirko ČERNÁK. Deposition of Zn-containing films using atmospheric pressure plasma jet. Open chemistry. De Gruyter Open, 2014, vol. 13, No 1, p. 198-203. ISSN 2391-5420. Available from: https://dx.doi.org/10.1515/chem-2015-0020.
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Basic information
Original name Deposition of Zn-containing films using atmospheric pressure plasma jet
Authors GALMIZ, Oleksandr (804 Ukraine, belonging to the institution), Monika STUPAVSKÁ (703 Slovakia, belonging to the institution), Harm WULFF (276 Germany), Holger KERSTEN (276 Germany), Antonín BRABLEC (203 Czech Republic, guarantor, belonging to the institution) and Mirko ČERNÁK (703 Slovakia, belonging to the institution).
Edition Open chemistry, De Gruyter Open, 2014, 2391-5420.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10305 Fluids and plasma physics
Country of publisher Germany
Confidentiality degree is not subject to a state or trade secret
WWW URL
RIV identification code RIV/00216224:14310/14:00079196
Organization unit Faculty of Science
Doi http://dx.doi.org/10.1515/chem-2015-0020
UT WoS 000355403100023
Keywords in English Atmospheric pressure plasma jet; film deposition; zinc.
Tags AKR
Tags International impact, Reviewed
Changed by Changed by: Mgr. Marie Šípková, DiS., učo 437722. Changed: 24/6/2020 14:28.
Abstract
The aim of this work was to deposit Zn-containing films on Si substrates using the commercial atmospheric pressure plasma jet “kINPen’09”. In preliminary experiments Zn-containing films were deposited on the substrates immersed in water solutions of Zn(NO3)2.6H2O salt. The surface composition of deposited films was analyzed by XPS (X-ray photoelectron spectroscopy) technique while the bulk composition was studied by means of XRD (X-ray diffraction) mesurements. The film thickness was measured by a profilometer. We have found out, that the concentration of the zinc nitrate solution as well as changes in the deposition time result in a large fluctuation of the deposited film thickness. However, the successful deposition of the Zn-containing films on the Si substrate was definitely confirmed
Links
ED2.1.00/03.0086, research and development projectName: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy
EE2.3.30.0009, research and development projectName: Zaměstnáním čerstvých absolventů doktorského studia k vědecké excelenci
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