| VON KÄNEL, Hans, Fabio ISA, Claudiu Valentin FALUB, E. J. BARTHAZY, Elisabeth MÜLLER, Daniel CHRASTINA, Giovanni ISELLA, Thomas KREILIGER, Alfonso TABOADA, Mojmír MEDUŇA, R. KAUFMANN, A. NEELS, Alex DOMMANN, Philippe NIEDERMANN, F. MANCARELLA, M. MAUCERI, M. PUGLISI, D. CRIPPA, F. LA VIA, R. ANZALONE, N. PILUSO, Roberto BERGAMASCHINI, Anna MARZEGALLI a Leo MIGLIO. Three-dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates. In SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES. Pennington: Electrochemical Society Inc., 2014, s. 631-648. ISBN 978-1-60768-543-2. Dostupné z: https://dx.doi.org/10.1149/06406.0631ecst. |
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@inproceedings{1228186,
author = {von Känel, Hans and Isa, Fabio and Falub, Claudiu Valentin and Barthazy, E. J. and Müller, Elisabeth and Chrastina, Daniel and Isella, Giovanni and Kreiliger, Thomas and Taboada, Alfonso and Meduňa, Mojmír and Kaufmann, R. and Neels, A. and Dommann, Alex and Niedermann, Philippe and Mancarella, F. and Mauceri, M. and Puglisi, M. and Crippa, D. and La Via, F. and Anzalone, R. and Piluso, N. and Bergamaschini, Roberto and Marzegalli, Anna and Miglio, Leo},
address = {Pennington},
booktitle = {SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES},
doi = {http://dx.doi.org/10.1149/06406.0631ecst},
keywords = {Aspect ratio; Chemical vapor deposition; Crystals; Dislocations; Germanium; Silicon; heteroepitaxy},
howpublished = {tištěná verze "print"},
language = {eng},
location = {Pennington},
isbn = {978-1-60768-543-2},
pages = {631-648},
publisher = {Electrochemical Society Inc.},
title = {Three-dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates},
url = {http://ma.ecsdl.org/content/MA2014-02/35/1822.abstract},
year = {2014}
}
TY - JOUR
ID - 1228186
AU - von Känel, Hans - Isa, Fabio - Falub, Claudiu Valentin - Barthazy, E. J. - Müller, Elisabeth - Chrastina, Daniel - Isella, Giovanni - Kreiliger, Thomas - Taboada, Alfonso - Meduňa, Mojmír - Kaufmann, R. - Neels, A. - Dommann, Alex - Niedermann, Philippe - Mancarella, F. - Mauceri, M. - Puglisi, M. - Crippa, D. - La Via, F. - Anzalone, R. - Piluso, N. - Bergamaschini, Roberto - Marzegalli, Anna - Miglio, Leo
PY - 2014
TI - Three-dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates
PB - Electrochemical Society Inc.
CY - Pennington
SN - 9781607685432
KW - Aspect ratio
KW - Chemical vapor deposition
KW - Crystals
KW - Dislocations
KW - Germanium
KW - Silicon
KW - heteroepitaxy
UR - http://ma.ecsdl.org/content/MA2014-02/35/1822.abstract
L2 - http://ma.ecsdl.org/content/MA2014-02/35/1822.abstract
N2 - We have recently demonstrated for the example of Ge/Si(001) that crystal defects, wafer bowing can be avoided by combining deep substrate patterning, resulting in dense arrays of highly perfect three-dimensional epitaxial crystals. Here we discuss the extension of the method to layer/substrate combinations with lattice misfits ranging from zero for pure Si/Si(001) up to 20% for 3C-SiC/Si(001).
ER -
VON KÄNEL, Hans, Fabio ISA, Claudiu Valentin FALUB, E. J. BARTHAZY, Elisabeth MÜLLER, Daniel CHRASTINA, Giovanni ISELLA, Thomas KREILIGER, Alfonso TABOADA, Mojmír MEDUŇA, R. KAUFMANN, A. NEELS, Alex DOMMANN, Philippe NIEDERMANN, F. MANCARELLA, M. MAUCERI, M. PUGLISI, D. CRIPPA, F. LA VIA, R. ANZALONE, N. PILUSO, Roberto BERGAMASCHINI, Anna MARZEGALLI a Leo MIGLIO. Three-dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates. In \textit{SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES}. Pennington: Electrochemical Society Inc., 2014, s.~631-648. ISBN~978-1-60768-543-2. Dostupné z: https://dx.doi.org/10.1149/06406.0631ecst.
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