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@misc{1232868, author = {Caha, Ondřej and Wang, Chennan and Münz, Filip and Humlíček, Josef}, address = {Masarykova univerzita, Brno}, keywords = {layered structures; GaN; AlGaN; silicon}, language = {eng}, location = {Masarykova univerzita, Brno}, publisher = {ONSEMI}, title = {Metrology of epitaxial layers *GaN}, year = {2014} }
TY - GEN ID - 1232868 AU - Caha, Ondřej - Wang, Chennan - Münz, Filip - Humlíček, Josef PY - 2014 TI - Metrology of epitaxial layers *GaN VL - Report LDDA 2014 PB - ONSEMI CY - Masarykova univerzita, Brno KW - layered structures KW - GaN KW - AlGaN KW - silicon N2 - *Utilization of characterization methods for development of *Al/GaN epitaxial technology. Evaluating the feasibility of MOCVD epitaxial growth of HEMT materials including structure characteristics and characterization methods. · Perform characterization of optical properties of *Al/GaN layered system and propose metrology for layer thickness estimation. · Perform correlation of measurement with FTIR system. · Develop x-ray methods for characterization of defects in epitaxial *Al/GaN layers. · Develop x-ray methods for fast analysis of composition of epitaxial *Al/GaN layers. ER -
CAHA, Ondřej, Chennan WANG, Filip MÜNZ a Josef HUMLÍČEK. \textit{Metrology of epitaxial layers *GaN}. Masarykova univerzita, Brno: ONSEMI, 2014, 67 s. Report LDDA 2014.
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