Imaging in NIR *SOI, GaN

MÜNZ, Filip and Josef HUMLÍČEK. Imaging in NIR *SOI, GaN. Masarykova univerzita, Brno: ONSEMI, 2014, 20 pp. Report LDDA 2014.

Basic information

Original name

Imaging in NIR *SOI, GaN

Name in Czech

Zobrazování v NIR *SOI, GaN

Authors

MÜNZ, Filip (203 Czech Republic, belonging to the institution) and Josef HUMLÍČEK (203 Czech Republic, guarantor, belonging to the institution)

Edition

Masarykova univerzita, Brno, 20 pp. Report LDDA 2014, 2014

Publisher

ONSEMI

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Other information

Language

English

Type of outcome

Výzkumná zpráva

Field of Study

10302 Condensed matter physics

Country of publisher

Czech Republic

Confidentiality degree

obsah podléhá obchodnímu tajemství

RIV identification code

RIV/00216224:14740/14:00079946

Organization unit

Central European Institute of Technology

Keywords in English

layered structures; SOI; GaN; AlGaN; silicon

Tags

KONTROLA OK, rivok

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Abstract

V originále

*Tools for imaging of interferences in thin layers. Completed prototype of equipment for imaging of interferences on 150 mm GaN on Si and 150 and 200 mm SOI wafers. Validate the method and equipment with analysis of SOI and GaN wafers (comparison of thickness maps with FTIR and SEM values. Prepare basic technical documentation, working instructions, recipes and metrological instructions.

In Czech

*Nástroje pro zobrazování interferencí v tenkých vrstvách. Prototyp zařízení pro 150 mm GaN na Si a 150 a 200 mm SOI wafery.