| BUSBY, Yan, Sebastian NAU, Stefan SAX, Emil LIST-KRATOCHVIL, Jiří NOVÁK, Rupak BANERJEE, Frank SCHREIBER a Jean-Jacque PIREAUX. Direct observation of conductive filament formation in Alq3 based organic resistive memories. Journal of Applied Physics. Melville (USA): AMER INST PHYSICS, 2015, roč. 118, č. 7, s. nestránkováno, 6 s. ISSN 0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.4928622. |
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@article{1314740,
author = {Busby, Yan and Nau, Sebastian and Sax, Stefan and ListandKratochvil, Emil and Novák, Jiří and Banerjee, Rupak and Schreiber, Frank and Pireaux, JeanandJacque},
article_location = {Melville (USA)},
article_number = {7},
doi = {http://dx.doi.org/10.1063/1.4928622},
keywords = {Silver; Alq3; diffusion; electrodes; negative resitance; hybrid organic-inorganic memories; resistive switching; metal nano-particles; filamentary conduction; X-ray reflectivity; XPS; ToF-SIMS},
language = {eng},
issn = {0021-8979},
journal = {Journal of Applied Physics},
title = {Direct observation of conductive filament formation in Alq3 based organic resistive memories},
url = {http://scitation.aip.org/content/aip/journal/jap/118/7/10.1063/1.4928622},
volume = {118},
year = {2015}
}
TY - JOUR
ID - 1314740
AU - Busby, Yan - Nau, Sebastian - Sax, Stefan - List-Kratochvil, Emil - Novák, Jiří - Banerjee, Rupak - Schreiber, Frank - Pireaux, Jean-Jacque
PY - 2015
TI - Direct observation of conductive filament formation in Alq3 based organic resistive memories
JF - Journal of Applied Physics
VL - 118
IS - 7
SP - nestránkováno
EP - nestránkováno
PB - AMER INST PHYSICS
SN - 00218979
KW - Silver
KW - Alq3
KW - diffusion
KW - electrodes
KW - negative resitance
KW - hybrid organic-inorganic memories
KW - resistive switching
KW - metal nano-particles
KW - filamentary conduction
KW - X-ray reflectivity
KW - XPS
KW - ToF-SIMS
UR - http://scitation.aip.org/content/aip/journal/jap/118/7/10.1063/1.4928622
N2 - This work explores resistive switching mechanisms in non-volatile organic memory devices based on tris(8-hydroxyquinolie) aluminum (Alq(3)). Advanced characterization tools are applied to investigate metal diffusion in ITO/Alq(3)/Ag memory device stacks leading to conductive filament formation. The morphology of Alq(3)/Ag layers as a function of the metal evaporation conditions is studied by X-ray reflectivity, while depth profile analysis with X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry is applied to characterize operational memory elements displaying reliable bistable current-voltage characteristics. 3D images of the distribution of silver inside the organic layer clearly point towards the existence of conductive filaments and allow for the identification of the initial filament formation and inactivation mechanisms during switching of the device. Initial filament formation is suggested to be driven by field assisted diffusion of silver from abundant structures formed during the top electrode evaporation, whereas thermochemical effects lead to local filament inactivation.
ER -
BUSBY, Yan, Sebastian NAU, Stefan SAX, Emil LIST-KRATOCHVIL, Jiří NOVÁK, Rupak BANERJEE, Frank SCHREIBER a Jean-Jacque PIREAUX. Direct observation of conductive filament formation in Alq3 based organic resistive memories. \textit{Journal of Applied Physics}. Melville (USA): AMER INST PHYSICS, 2015, roč.~118, č.~7, s.~nestránkováno, 6 s. ISSN~0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.4928622.
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