| RŮŽIČKA, Jiří, Ondřej CAHA, Václav HOLÝ, Hubert STEINER, Valentyn VOLOBUIEV, Andreas NEY, Günther BAUER, Tomáš DUCHON, Kateřina VELTRUSKÁ, I. KHALAKHAN, Vladimír MATOLÍN, E. SCHWIER, H. IWASAWA, K. SHIMADA a Günter SPRINGHOLZ. Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers. New Journal of Physics. BRISTOL: Institute of Physics, 2015, roč. 17, January, s. "nestránkováno", 11 s. ISSN 1367-2630. Dostupné z: https://dx.doi.org/10.1088/1367-2630/17/1/013028. |
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@article{1336964,
author = {Růžička, Jiří and Caha, Ondřej and Holý, Václav and Steiner, Hubert and Volobuiev, Valentyn and Ney, Andreas and Bauer, Günther and Duchon, Tomáš and Veltruská, Kateřina and Khalakhan, I. and Matolín, Vladimír and Schwier, E. and Iwasawa, H. and Shimada, K. and Springholz, Günter},
article_location = {BRISTOL},
article_number = {January},
doi = {http://dx.doi.org/10.1088/1367-2630/17/1/013028},
keywords = {topological insulators; thin layers; EXAFS; ARPES},
language = {eng},
issn = {1367-2630},
journal = {New Journal of Physics},
title = {Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers},
volume = {17},
year = {2015}
}
TY - JOUR
ID - 1336964
AU - Růžička, Jiří - Caha, Ondřej - Holý, Václav - Steiner, Hubert - Volobuiev, Valentyn - Ney, Andreas - Bauer, Günther - Duchon, Tomáš - Veltruská, Kateřina - Khalakhan, I. - Matolín, Vladimír - Schwier, E. - Iwasawa, H. - Shimada, K. - Springholz, Günter
PY - 2015
TI - Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers
JF - New Journal of Physics
VL - 17
IS - January
SP - "nestránkováno"
EP - "nestránkováno"
PB - Institute of Physics
SN - 13672630
KW - topological insulators
KW - thin layers
KW - EXAFS
KW - ARPES
N2 - We show that in manganese-doped topological insulator bismuth telluride layers, Mnatoms are incorporated predominantly as interstitials in the van der Waals gaps between the quintuple layers and not substitutionally on Bi sites within the quintuple layers. The structural properties of epitaxial layers withMnconcentration of up to 13% are studied by high-resolution x-ray diffraction, evidencing a shrinking of both the in-plane and out-of plane lattice parameters with increasing Mn content. Ferromagnetism sets in for Mn contents around 3% and the Curie temperatures rises up to 15 K for a Mn concentration of 9%. The easy magnetization axis is along the c-axis perpendicular to the (0001) epilayer plane. Angle-resolved photoemission spectroscopy reveals that the Fermi level is situated in the conduction band and no evidence for a gap opening at the topological surface state with the Dirac cone dispersion is found within the experimental resolution at temperatures close to the Curie temperature. From the detailed analysis of the extended x-ray absorption fine-structure experiments (EXAFS) performed at the MnK-edge, we demonstrate that the Mn atoms occupy interstitial positions within the van der Waals gap and are surrounded octahedrally by Te atoms of the adjacent quintuple layers.
ER -
RŮŽIČKA, Jiří, Ondřej CAHA, Václav HOLÝ, Hubert STEINER, Valentyn VOLOBUIEV, Andreas NEY, Günther BAUER, Tomáš DUCHON, Kateřina VELTRUSKÁ, I. KHALAKHAN, Vladimír MATOLÍN, E. SCHWIER, H. IWASAWA, K. SHIMADA a Günter SPRINGHOLZ. Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers. \textit{New Journal of Physics}. BRISTOL: Institute of Physics, 2015, roč.~17, January, s.~''nestránkováno'', 11 s. ISSN~1367-2630. Dostupné z: https://dx.doi.org/10.1088/1367-2630/17/1/013028.
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