Lattice bending in three-dimensional Ge microcrystals studied
by X-ray nanodiffraction and modelling

J 2016

Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling

MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA, Anna MARZEGALLI, Daniel CHRASTINA et. al.

Základní údaje

Originální název

Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling

Název česky

Ohyb mřížky ve 3D Ge mikrokrystalech studovaných pomocí rtg nanodifrakce a modelováním

Autoři

MEDUŇA, Mojmír (203 Česká republika, garant, domácí), Claudiu Valentin FALUB (642 Rumunsko), Fabio ISA (380 Itálie), Anna MARZEGALLI (380 Itálie), Daniel CHRASTINA (826 Velká Británie a Severní Irsko), Giovanni ISELLA (380 Itálie), Leo MIGLIO (380 Itálie), Alex DOMMANN (756 Švýcarsko) a Hans VON KAENEL (756 Švýcarsko)

Vydání

Journal of Applied Crystallography, Chester, INT UNION CRYSTALLOGRAPHY, 2016, 1600-5767

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.614

Kód RIV

RIV/00216224:14740/16:00089936

Organizační jednotka

Středoevropský technologický institut

DOI

http://dx.doi.org/10.1107/S1600576716006397

UT WoS

000377020600028

Klíčová slova česky

skenovací rtg nanodifrakce; ohyb mřížky; Ge mikrokrystaly; relaxace teplotního pnutí

Klíčová slova anglicky

scanning X-ray nanodiffraction; lattice bending; Ge microcrystals; thermal strain relaxation

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 13. 3. 2018 10:03, Mgr. Mojmír Meduňa, Ph.D.

Anotace

V originále

Extending the functionality of ubiquitous Si-based microelectronic devices often requires combining materials with different lattice parameters and thermal expansion coefficients. In this paper, scanning X-ray nanodiffraction is used to map the lattice bending produced by thermal strain relaxation in heteroepitaxial Ge microcrystals of various heights grown on high aspect ratio Si pillars. The local crystal lattice tilt and curvature are obtained from experimental three-dimensional reciprocal space maps and compared with diffraction patterns simulated by means of the finite element method. The simulations are in good agreement with the experimental data for various positions of the focused X-ray beam inside a Ge microcrystal. Both experiment and simulations reveal that the crystal lattice bending induced by thermal strain relaxation vanishes with increasing Ge crystal height.

Návaznosti

ED1.1.00/02.0068, projekt VaV

Název: CEITEC - central european institute of technology

EE2.3.20.0027, projekt VaV

Název: Posílení excelence vědeckých týmů v oblasti nano a mikrotechnologií

LQ1601, projekt VaV

Název: CEITEC 2020 (Akronym: CEITEC2020)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CEITEC 2020

Citovat

MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA, Anna MARZEGALLI, Daniel CHRASTINA, Giovanni ISELLA, Leo MIGLIO, Alex DOMMANN a Hans VON KAENEL. Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling. Journal of Applied Crystallography. Chester: INT UNION CRYSTALLOGRAPHY, 2016, roč. 49, June, s. 976-986. ISSN 1600-5767. Dostupné z: https://dx.doi.org/10.1107/S1600576716006397.

@article{1345310,
   author = {Meduňa, Mojmír and Falub, Claudiu Valentin and Isa, Fabio and Marzegalli, Anna and Chrastina, Daniel and Isella, Giovanni and Miglio, Leo and Dommann, Alex and von Kaenel, Hans},
   article_location = {Chester},
   article_number = {June},
   doi = {http://dx.doi.org/10.1107/S1600576716006397},
   keywords = {scanning X-ray nanodiffraction; lattice bending; Ge microcrystals; thermal strain relaxation},
   language = {eng},
   issn = {1600-5767},
   journal = {Journal of Applied Crystallography},
   title = {Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling},
   url = {http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html},
   volume = {49},
   year = {2016}
}

TY  - JOUR
ID  - 1345310
AU  - Meduňa, Mojmír - Falub, Claudiu Valentin - Isa, Fabio - Marzegalli, Anna - Chrastina, Daniel - Isella, Giovanni - Miglio, Leo - Dommann, Alex - von Kaenel, Hans
PY  - 2016
TI  - Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling
JF  - Journal of Applied Crystallography
VL  - 49
IS  - June
SP  - 976-986
EP  - 976-986
PB  - INT UNION CRYSTALLOGRAPHY
SN  - 16005767
KW  - scanning X-ray nanodiffraction
KW  - lattice bending
KW  - Ge microcrystals
KW  - thermal strain relaxation
UR  - http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html
L2  - http://journals.iucr.org/j/issues/2016/03/00/rg5104/index.html
N2  - Extending the functionality of ubiquitous Si-based microelectronic devices often requires combining materials with different lattice parameters and thermal expansion coefficients. In this paper, scanning X-ray nanodiffraction is used to map the lattice bending produced by thermal strain relaxation in heteroepitaxial Ge microcrystals of various heights grown on high aspect ratio Si pillars. The local crystal lattice tilt and curvature are obtained from experimental three-dimensional reciprocal space maps and compared with diffraction patterns simulated by means of the finite element method. The simulations are in good agreement with the experimental data for various positions of the focused X-ray beam inside a Ge microcrystal. Both experiment and simulations reveal that the crystal lattice bending induced by thermal strain relaxation vanishes with increasing Ge crystal height.
ER  -

MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA, Anna MARZEGALLI, Daniel CHRASTINA, Giovanni ISELLA, Leo MIGLIO, Alex DOMMANN a Hans VON KAENEL. Lattice bending in three-dimensional Ge microcrystals studied by X-ray nanodiffraction and modelling. \textit{Journal of Applied Crystallography}. Chester: INT UNION CRYSTALLOGRAPHY, 2016, roč.~49, June, s.~976-986. ISSN~1600-5767. Dostupné z: https://dx.doi.org/10.1107/S1600576716006397.

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