Structural and morphological characterization of Al2O3 coated
macro-porous silicon by atomic layer deposition

J 2016

Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition

SAMPATH, Sridhar, Philipp MAYDANNIK, Tatiana IVANOVA, Tomáš HOMOLA, Mika SILLANPAA et. al.

Základní údaje

Originální název

Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition

Autoři

SAMPATH, Sridhar (356 Indie, garant), Philipp MAYDANNIK (643 Rusko), Tatiana IVANOVA (643 Rusko), Tomáš HOMOLA (703 Slovensko, domácí), Mika SILLANPAA (246 Finsko), Rameshbabu NAGUMOTHU (356 Indie) a Viswanathan ALAGAN (356 Indie)

Vydání

Thin Solid Films, 2016, 0040-6090

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10305 Fluids and plasma physics

Stát vydavatele

Švýcarsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.879

Kód RIV

RIV/00216224:14310/16:00090987

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1016/j.tsf.2016.09.026

UT WoS

000389388600089

Klíčová slova anglicky

Electrochemical anodization;Atomic layer deposition;Porous silicon;Conformal coating;Band gap energy

Štítky

AKR, rivok

Změněno: 13. 4. 2017 23:06, Ing. Andrea Mikešková

Anotace

V originále

In the present study, Al2O3 coated on macro-porous silicon (m-PS) is prepared by atomic layer deposition (ALD) whereas m-PS is prepared by electrochemical anodization of P type silicon (100) with current density of 15 mA/cm2. Field emission scanning electron microscopy analysis shows Al2O3 nanoparticles with size of ~ 100 nm are conformally coated on m-PS. The surface chemistry and formation mechanism of ALD of Al2O3 (ALD-Al2O3) on m-PS are demonstrated in detail. Optical profilometer results of Al2O3/m-PS confirm conformality of Al2O3 coating on m-PS because the surface amplitude parameter values of m-PS are decreased after ALD-Al2O3. Fourier Transform Infrared analysis confirms that unstable Si-H species of m-PS are replaced with stable Si-Al species. X-ray photoelectron spectroscopy (XPS) analysis of Al2O3/m-PS is carried out for chemical analysis and band gap energy measurement of Al2O3. The XPS survey spectrum shows that fluorine peak is also evolved along with Al, O and C elements which confirm that m-PS surface consists of fluorine. The band gap energy of Al2O3 coating is calculated as 6.91 eV from analysis of high resolution O 1s spectrum.

Návaznosti

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

SAMPATH, Sridhar, Philipp MAYDANNIK, Tatiana IVANOVA, Tomáš HOMOLA, Mika SILLANPAA, Rameshbabu NAGUMOTHU a Viswanathan ALAGAN. Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition. Thin Solid Films. 2016, roč. 616, October, s. 628-634. ISSN 0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2016.09.026.

@article{1355392,
   author = {Sampath, Sridhar and Maydannik, Philipp and Ivanova, Tatiana and Homola, Tomáš and Sillanpaa, Mika and Nagumothu, Rameshbabu and Alagan, Viswanathan},
   article_number = {October},
   doi = {http://dx.doi.org/10.1016/j.tsf.2016.09.026},
   keywords = {Electrochemical anodization;Atomic layer deposition;Porous silicon;Conformal coating;Band gap energy},
   language = {eng},
   issn = {0040-6090},
   journal = {Thin Solid Films},
   title = {Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition},
   url = {http://www.sciencedirect.com/science/article/pii/S004060901630534X},
   volume = {616},
   year = {2016}
}

TY  - JOUR
ID  - 1355392
AU  - Sampath, Sridhar - Maydannik, Philipp - Ivanova, Tatiana - Homola, Tomáš - Sillanpaa, Mika - Nagumothu, Rameshbabu - Alagan, Viswanathan
PY  - 2016
TI  - Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition
JF  - Thin Solid Films
VL  - 616
IS  - October
SP  - 628-634
EP  - 628-634
SN  - 00406090
KW  - Electrochemical anodization;Atomic layer deposition;Porous silicon;Conformal coating;Band gap energy
UR  - http://www.sciencedirect.com/science/article/pii/S004060901630534X
L2  - http://www.sciencedirect.com/science/article/pii/S004060901630534X
N2  - In the present study, Al2O3 coated on macro-porous silicon (m-PS) is prepared by atomic layer deposition (ALD) whereas m-PS is prepared by electrochemical anodization of P type silicon (100) with current density of 15 mA/cm2. Field emission scanning electron microscopy analysis shows Al2O3 nanoparticles with size of ~ 100 nm are conformally coated on m-PS. The surface chemistry and formation mechanism of ALD of Al2O3 (ALD-Al2O3) on m-PS are demonstrated in detail. Optical profilometer results of Al2O3/m-PS confirm conformality of Al2O3 coating on m-PS because the surface amplitude parameter values of m-PS are decreased after ALD-Al2O3. Fourier Transform Infrared analysis confirms that unstable Si-H species of m-PS are replaced with stable Si-Al species. X-ray photoelectron spectroscopy (XPS) analysis of Al2O3/m-PS is carried out for chemical analysis and band gap energy measurement of Al2O3. The XPS survey spectrum shows that fluorine peak is also evolved along with Al, O and C elements which confirm that m-PS surface consists of fluorine. The band gap energy of Al2O3 coating is calculated as 6.91 eV from analysis of high resolution O 1s spectrum.
ER  -

SAMPATH, Sridhar, Philipp MAYDANNIK, Tatiana IVANOVA, Tomáš HOMOLA, Mika SILLANPAA, Rameshbabu NAGUMOTHU a Viswanathan ALAGAN. Structural and morphological characterization of Al2O3 coated macro-porous silicon by atomic layer deposition. \textit{Thin Solid Films}. 2016, roč.~616, October, s.~628-634. ISSN~0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2016.09.026.

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