Atmospheric pressure plasma etching of silicon dioxide using
diffuse coplanar surface barrier discharge generated in pure
hydrogen

J 2017

Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen

KRUMPOLEC, Richard, Jan ČECH, Jana JURMANOVÁ, Pavol ĎURINA, Mirko ČERNÁK et. al.

Základní údaje

Originální název

Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen

Autoři

KRUMPOLEC, Richard (703 Slovensko, garant, domácí), Jan ČECH (203 Česká republika, domácí), Jana JURMANOVÁ (203 Česká republika, domácí), Pavol ĎURINA (703 Slovensko) a Mirko ČERNÁK (703 Slovensko, domácí)

Vydání

Surface & coatings technology, LAUSANNE, SWITZERLAND, Elsevier, 2017, 0257-8972

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10305 Fluids and plasma physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.906

Kód RIV

RIV/00216224:14310/17:00095958

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1016/j.surfcoat.2016.11.036

UT WoS

000396184400036

Klíčová slova anglicky

DCSBD; Hydrogen plasma; Low temperature; SiO2; etching; Atmospheric pressure

Štítky

NZ, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 28. 3. 2018 17:04, Ing. Nicole Zrilić

Anotace

V originále

We report on the method of dry etching of silicon dioxide (SiO2) layers by cold plasma treatment at atmospheric pressure in pure hydrogen using Diffuse Coplanar Surface Barrier Discharge (DCSBD). The SiO2 etching rate was estimated at ~ 1 nm/min. The studied plasma process was found to be the composition of plasma induced reduction and etching. The changes in surface morphology of etched samples were observed by scanning electron microscopy. X-ray photoelectron spectroscopy analysis was applied to identify the surface chemical changes due to the reduction processes. Two regimes of plasma treatment were examined. While the dynamic treatment, where the treated surface was moved relative to the plasma source, led to a homogeneous process, the treatment in static conditions resulted in a stripe-type pattern on the surface of the samples reflecting the electrode structure of the plasma source. The results provide a basis for a new and simple way to prepare clean, native oxide free silicon surfaces in dry plasma process at atmospheric pressure.

Návaznosti

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

KRUMPOLEC, Richard, Jan ČECH, Jana JURMANOVÁ, Pavol ĎURINA a Mirko ČERNÁK. Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen. Surface & coatings technology. LAUSANNE, SWITZERLAND: Elsevier, 2017, roč. 309, January, s. 301-308. ISSN 0257-8972. Dostupné z: https://dx.doi.org/10.1016/j.surfcoat.2016.11.036.

@article{1363744,
   author = {Krumpolec, Richard and Čech, Jan and Jurmanová, Jana and Ďurina, Pavol and Černák, Mirko},
   article_location = {LAUSANNE, SWITZERLAND},
   article_number = {January},
   doi = {http://dx.doi.org/10.1016/j.surfcoat.2016.11.036},
   keywords = {DCSBD; Hydrogen plasma; Low temperature; SiO2; etching; Atmospheric pressure},
   language = {eng},
   issn = {0257-8972},
   journal = {Surface & coatings technology},
   title = {Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen},
   url = {http://www.sciencedirect.com/science/article/pii/S0257897216311422},
   volume = {309},
   year = {2017}
}

TY  - JOUR
ID  - 1363744
AU  - Krumpolec, Richard - Čech, Jan - Jurmanová, Jana - Ďurina, Pavol - Černák, Mirko
PY  - 2017
TI  - Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen
JF  - Surface & coatings technology
VL  - 309
IS  - January
SP  - 301-308
EP  - 301-308
PB  - Elsevier
SN  - 02578972
KW  - DCSBD
KW  - Hydrogen plasma
KW  - Low temperature
KW  - SiO2
KW  - etching
KW  - Atmospheric pressure
UR  - http://www.sciencedirect.com/science/article/pii/S0257897216311422
N2  - We report on the method of dry etching of silicon dioxide (SiO2) layers by cold plasma treatment at atmospheric pressure in pure hydrogen using Diffuse Coplanar Surface Barrier Discharge (DCSBD). The SiO2 etching rate was estimated at ~ 1 nm/min. The studied plasma process was found to be the composition of plasma induced reduction and etching. The changes in surface morphology of etched samples were observed by scanning electron microscopy. X-ray photoelectron spectroscopy analysis was applied to identify the surface chemical changes due to the reduction processes. Two regimes of plasma treatment were examined. While the dynamic treatment, where the treated surface was moved relative to the plasma source, led to a homogeneous process, the treatment in static conditions resulted in a stripe-type pattern on the surface of the samples reflecting the electrode structure of the plasma source. The results provide a basis for a new and simple way to prepare clean, native oxide free silicon surfaces in dry plasma process at atmospheric pressure.
ER  -

KRUMPOLEC, Richard, Jan ČECH, Jana JURMANOVÁ, Pavol ĎURINA a Mirko ČERNÁK. Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen. \textit{Surface \&{} coatings technology}. LAUSANNE, SWITZERLAND: Elsevier, 2017, roč.~309, January, s.~301-308. ISSN~0257-8972. Dostupné z: https://dx.doi.org/10.1016/j.surfcoat.2016.11.036.

Podrobný výpis o publikaci