Preparation of (001) preferentially oriented titanium thin
films by ion-beam sputtering deposition on thermal silicon
dioxide

J 2016

Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

GABLECH, Imrich, Vojtěch SVATOŠ, Ondřej CAHA, Milos HRABOVSKY, Jan PRASEK et. al.

Základní údaje

Originální název

Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

Autoři

GABLECH, Imrich (203 Česká republika), Vojtěch SVATOŠ (203 Česká republika), Ondřej CAHA (203 Česká republika, garant, domácí), Milos HRABOVSKY (203 Česká republika), Jan PRASEK (203 Česká republika), Jaromír HUBÁLEK (203 Česká republika) a Tomáš ŠIKOLA (203 Česká republika)

Vydání

Journal of materials science, NEW YORK, Springer, 2016, 0022-2461

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

20201 Electrical and electronic engineering

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.599

Kód RIV

RIV/00216224:14740/16:00093661

Organizační jednotka

Středoevropský technologický institut

DOI

http://dx.doi.org/10.1007/s10853-015-9648-y

UT WoS

000368054100005

Klíčová slova anglicky

titanium; sputtering; x-ray diffraction

Štítky

CF NANO, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 1. 3. 2019 11:36, doc. Mgr. Ondřej Caha, Ph.D.

Anotace

ORIG CZ

V originále

We propose the ion-beam sputtering deposition providing Ti thin films of desired crystallographic orientation and smooth surface morphology not obtainable with conventional deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized deposition conditions for growing of thin films with the only (001) preferential orientation of film crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been found to be stable upon annealing up to 300 A degrees C which is often essential for envisaging subsequent deposition of piezoelectric AlN thin films.

Česky

Návaznosti

ED1.1.00/02.0068, projekt VaV

Název: CEITEC - central european institute of technology

LM2011020, projekt VaV

Název: CEITEC ? open access

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CEITEC - open access

Citovat

GABLECH, Imrich, Vojtěch SVATOŠ, Ondřej CAHA, Milos HRABOVSKY, Jan PRASEK, Jaromír HUBÁLEK a Tomáš ŠIKOLA. Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide. Journal of materials science. NEW YORK: Springer, 2016, roč. 51, č. 7, s. 3329-3336. ISSN 0022-2461. Dostupné z: https://dx.doi.org/10.1007/s10853-015-9648-y.

@article{1373385,
   author = {Gablech, Imrich and Svatoš, Vojtěch and Caha, Ondřej and Hrabovsky, Milos and Prasek, Jan and Hubálek, Jaromír and Šikola, Tomáš},
   article_location = {NEW YORK},
   article_number = {7},
   doi = {http://dx.doi.org/10.1007/s10853-015-9648-y},
   keywords = {titanium; sputtering; x-ray diffraction},
   language = {eng},
   issn = {0022-2461},
   journal = {Journal of materials science},
   title = {Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide},
   url = {http://link.springer.com/article/10.1007%2Fs10853-015-9648-y},
   volume = {51},
   year = {2016}
}

TY  - JOUR
ID  - 1373385
AU  - Gablech, Imrich - Svatoš, Vojtěch - Caha, Ondřej - Hrabovsky, Milos - Prasek, Jan - Hubálek, Jaromír - Šikola, Tomáš
PY  - 2016
TI  - Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide
JF  - Journal of materials science
VL  - 51
IS  - 7
SP  - 3329-3336
EP  - 3329-3336
PB  - Springer
SN  - 00222461
KW  - titanium
KW  - sputtering
KW  - x-ray diffraction
UR  - http://link.springer.com/article/10.1007%2Fs10853-015-9648-y
L2  - http://link.springer.com/article/10.1007%2Fs10853-015-9648-y
N2  - We propose the ion-beam sputtering deposition providing Ti thin films of desired crystallographic orientation and smooth surface morphology not obtainable with conventional deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized deposition conditions for growing of thin films with the only (001) preferential orientation of film crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been found to be stable upon annealing up to 300 A degrees C which is often essential for envisaging subsequent deposition of piezoelectric AlN thin films.
ER  -

GABLECH, Imrich, Vojtěch SVATOŠ, Ondřej CAHA, Milos HRABOVSKY, Jan PRASEK, Jaromír HUBÁLEK a Tomáš ŠIKOLA. Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide. \textit{Journal of materials science}. NEW YORK: Springer, 2016, roč.~51, č.~7, s.~3329-3336. ISSN~0022-2461. Dostupné z: https://dx.doi.org/10.1007/s10853-015-9648-y.

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