| GABLECH, Imrich, Vojtěch SVATOŠ, Ondřej CAHA, Milos HRABOVSKY, Jan PRASEK, Jaromír HUBÁLEK a Tomáš ŠIKOLA. Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide. Journal of materials science. NEW YORK: Springer, 2016, roč. 51, č. 7, s. 3329-3336. ISSN 0022-2461. Dostupné z: https://dx.doi.org/10.1007/s10853-015-9648-y. |
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@article{1373385,
author = {Gablech, Imrich and Svatoš, Vojtěch and Caha, Ondřej and Hrabovsky, Milos and Prasek, Jan and Hubálek, Jaromír and Šikola, Tomáš},
article_location = {NEW YORK},
article_number = {7},
doi = {http://dx.doi.org/10.1007/s10853-015-9648-y},
keywords = {titanium; sputtering; x-ray diffraction},
language = {eng},
issn = {0022-2461},
journal = {Journal of materials science},
title = {Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide},
url = {http://link.springer.com/article/10.1007%2Fs10853-015-9648-y},
volume = {51},
year = {2016}
}
TY - JOUR
ID - 1373385
AU - Gablech, Imrich - Svatoš, Vojtěch - Caha, Ondřej - Hrabovsky, Milos - Prasek, Jan - Hubálek, Jaromír - Šikola, Tomáš
PY - 2016
TI - Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide
JF - Journal of materials science
VL - 51
IS - 7
SP - 3329-3336
EP - 3329-3336
PB - Springer
SN - 00222461
KW - titanium
KW - sputtering
KW - x-ray diffraction
UR - http://link.springer.com/article/10.1007%2Fs10853-015-9648-y
L2 - http://link.springer.com/article/10.1007%2Fs10853-015-9648-y
N2 - We propose the ion-beam sputtering deposition providing Ti thin films of desired crystallographic orientation and smooth surface morphology not obtainable with conventional deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized deposition conditions for growing of thin films with the only (001) preferential orientation of film crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been found to be stable upon annealing up to 300 A degrees C which is often essential for envisaging subsequent deposition of piezoelectric AlN thin films.
ER -
GABLECH, Imrich, Vojtěch SVATOŠ, Ondřej CAHA, Milos HRABOVSKY, Jan PRASEK, Jaromír HUBÁLEK a Tomáš ŠIKOLA. Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide. \textit{Journal of materials science}. NEW YORK: Springer, 2016, roč.~51, č.~7, s.~3329-3336. ISSN~0022-2461. Dostupné z: https://dx.doi.org/10.1007/s10853-015-9648-y.
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