VOLOBUEV, V., P. MANDAL, M. GALICKA, Ondřej CAHA, J. SANCHEZ-BARRIGA, D. DISANTE, A. VARYKHALOV, A. KHIAR, S. PICOZZI, Günther BAUER, P. KACMAN, R. BUCZKO, O. RADER a Günter SPRINGHOLZ. Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk. ADVANCED MATERIALS. WEINHEIM: WILEY-V C H VERLAG GMBH, 2017, roč. 29, č. 3, s. "1604185-1"-"1604185-9", 9 s. ISSN 0935-9648. Dostupné z: https://dx.doi.org/10.1002/adma.201604185. |
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@article{1375764, author = {Volobuev, V. and Mandal, P. and Galicka, M. and Caha, Ondřej and SanchezandBarriga, J. and DiSante, D. and Varykhalov, A. and Khiar, A. and Picozzi, S. and Bauer, Günther and Kacman, P. and Buczko, R. and Rader, O. and Springholz, Günter}, article_location = {WEINHEIM}, article_number = {3}, doi = {http://dx.doi.org/10.1002/adma.201604185}, keywords = {MOLECULAR-BEAM EPITAXY; SNTE; GROWTH; PBTE; STATES; REALIZATION; INTERFACE; SURFACES; STRAIN; PHASE}, language = {eng}, issn = {0935-9648}, journal = {ADVANCED MATERIALS}, title = {Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk}, volume = {29}, year = {2017} }
TY - JOUR ID - 1375764 AU - Volobuev, V. - Mandal, P. - Galicka, M. - Caha, Ondřej - Sanchez-Barriga, J. - DiSante, D. - Varykhalov, A. - Khiar, A. - Picozzi, S. - Bauer, Günther - Kacman, P. - Buczko, R. - Rader, O. - Springholz, Günter PY - 2017 TI - Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk JF - ADVANCED MATERIALS VL - 29 IS - 3 SP - "1604185-1"-"1604185-9" EP - "1604185-1"-"1604185-9" PB - WILEY-V C H VERLAG GMBH SN - 09359648 KW - MOLECULAR-BEAM EPITAXY KW - SNTE KW - GROWTH KW - PBTE KW - STATES KW - REALIZATION KW - INTERFACE KW - SURFACES KW - STRAIN KW - PHASE N2 - The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface. ER -
VOLOBUEV, V., P. MANDAL, M. GALICKA, Ondřej CAHA, J. SANCHEZ-BARRIGA, D. DISANTE, A. VARYKHALOV, A. KHIAR, S. PICOZZI, Günther BAUER, P. KACMAN, R. BUCZKO, O. RADER a Günter SPRINGHOLZ. Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk. \textit{ADVANCED MATERIALS}. WEINHEIM: WILEY-V C H VERLAG GMBH, 2017, roč.~29, č.~3, s.~''1604185-1''-''1604185-9'', 9 s. ISSN~0935-9648. Dostupné z: https://dx.doi.org/10.1002/adma.201604185.
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