Hafnium oxide thin films as a barrier against copper diffusion
in solar absorbers

J 2017

Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers

KOTILAINEN, Minna Paula Katriina, Richard KRUMPOLEC, Daniel FRANTA, Pavel SOUČEK, Tomáš HOMOLA et. al.

Základní údaje

Originální název

Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers

Autoři

KOTILAINEN, Minna Paula Katriina (246 Finsko, domácí), Richard KRUMPOLEC (703 Slovensko, garant, domácí), Daniel FRANTA (203 Česká republika, domácí), Pavel SOUČEK (203 Česká republika, domácí), Tomáš HOMOLA (703 Slovensko, domácí), David Campbell CAMERON (826 Velká Británie a Severní Irsko, domácí) a Petri VUORISTO (246 Finsko)

Vydání

Solar Energy Materials and Solar Cells, AMSTERDAM, NETHERLANDS, ELSEVIER SCIENCE BV, 2017, 0927-0248

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 5.018

Kód RIV

RIV/00216224:14310/17:00096512

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1016/j.solmat.2017.02.033

UT WoS

000401208200018

Klíčová slova anglicky

Solar absorber;Diffusion barrier;Thermal ageing;Copper diffusion;HfO2 thin film

Štítky

NZ, rivok

Změněno: 4. 4. 2018 13:29, Ing. Nicole Zrilić

Anotace

V originále

The thermal stability of copper substrate material used in solar thermal collectors was investigated with and without atomic layer deposited (ALD) hafnium oxide barrier films at temperatures of 200–400 °C. HfO2 films were studied as barriers against thermal diffusion of copper substrate atoms. The ALD HfO2 thin films were deposited in a thermal process at 200 °C using Tetrakis(Dimethylamido)Hafnium(Hf(NMe2)4) and H2O precursors, with 200, 400, and 600 cycles. The Cu substrates with and without HfO2 thin films were aged by means of heat treatment in air. The influence of the HfO2 barriers was determined by optical, microstructural, and morphological analyses before and after the ageing procedures. The optical performance of the HfO2 barriers as a part of solar absorber stack was modelled with CODE Coating Designer. The copper surface without a HfO2 barrier thin film oxidized significantly, which increased thermal emittance and surface roughness. 200 cycles of HfO2 deposition did not result in a completely continuous coating and only provided a little protection against oxidation. Films of 200 and 400 cycles gave continuous coverage and the thickest HfO2 thin film studied, which was deposited from 600 ALD cycles and had a thickness ~50 nm, prevented Cu oxidation and diffusion processes after 2 h heat treatment in air at 300 °C, and retained low thermal emissivity. At 400 °C, diffusion and formation of copper oxide hillocks were observed but the HfO2 thin film significantly retarded the degradation when compared to a Cu substrate without and with thinner barrier layers.

Návaznosti

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

KOTILAINEN, Minna Paula Katriina, Richard KRUMPOLEC, Daniel FRANTA, Pavel SOUČEK, Tomáš HOMOLA, David Campbell CAMERON a Petri VUORISTO. Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers. Solar Energy Materials and Solar Cells. AMSTERDAM, NETHERLANDS: ELSEVIER SCIENCE BV, 2017, roč. 166, July, s. 140-146. ISSN 0927-0248. Dostupné z: https://dx.doi.org/10.1016/j.solmat.2017.02.033.

@article{1378718,
   author = {Kotilainen, Minna Paula Katriina and Krumpolec, Richard and Franta, Daniel and Souček, Pavel and Homola, Tomáš and Cameron, David Campbell and Vuoristo, Petri},
   article_location = {AMSTERDAM, NETHERLANDS},
   article_number = {July},
   doi = {http://dx.doi.org/10.1016/j.solmat.2017.02.033},
   keywords = {Solar absorber;Diffusion barrier;Thermal ageing;Copper diffusion;HfO2 thin film},
   language = {eng},
   issn = {0927-0248},
   journal = {Solar Energy Materials and Solar Cells},
   title = {Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers},
   url = {http://www.sciencedirect.com/science/article/pii/S0927024817300958},
   volume = {166},
   year = {2017}
}

TY  - JOUR
ID  - 1378718
AU  - Kotilainen, Minna Paula Katriina - Krumpolec, Richard - Franta, Daniel - Souček, Pavel - Homola, Tomáš - Cameron, David Campbell - Vuoristo, Petri
PY  - 2017
TI  - Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers
JF  - Solar Energy Materials and Solar Cells
VL  - 166
IS  - July
SP  - 140-146
EP  - 140-146
PB  - ELSEVIER SCIENCE BV
SN  - 09270248
KW  - Solar absorber;Diffusion barrier;Thermal ageing;Copper diffusion;HfO2 thin film
UR  - http://www.sciencedirect.com/science/article/pii/S0927024817300958
L2  - http://www.sciencedirect.com/science/article/pii/S0927024817300958
N2  - The thermal stability of copper substrate material used in solar thermal collectors was investigated with and without atomic layer deposited (ALD) hafnium oxide barrier films at temperatures of 200–400 °C. HfO2 films were studied as barriers against thermal diffusion of copper substrate atoms. The ALD HfO2 thin films were deposited in a thermal process at 200 °C using Tetrakis(Dimethylamido)Hafnium(Hf(NMe2)4) and H2O precursors, with 200, 400, and 600 cycles. The Cu substrates with and without HfO2 thin films were aged by means of heat treatment in air. The influence of the HfO2 barriers was determined by optical, microstructural, and morphological analyses before and after the ageing procedures. The optical performance of the HfO2 barriers as a part of solar absorber stack was modelled with CODE Coating Designer. The copper surface without a HfO2 barrier thin film oxidized significantly, which increased thermal emittance and surface roughness. 200 cycles of HfO2 deposition did not result in a completely continuous coating and only provided a little protection against oxidation. Films of 200 and 400 cycles gave continuous coverage and the thickest HfO2 thin film studied, which was deposited from 600 ALD cycles and had a thickness ~50 nm, prevented Cu oxidation and diffusion processes after 2 h heat treatment in air at 300 °C, and retained low thermal emissivity. At 400 °C, diffusion and formation of copper oxide hillocks were observed but the HfO2 thin film significantly retarded the degradation when compared to a Cu substrate without and with thinner barrier layers.
ER  -

KOTILAINEN, Minna Paula Katriina, Richard KRUMPOLEC, Daniel FRANTA, Pavel SOUČEK, Tomáš HOMOLA, David Campbell CAMERON a Petri VUORISTO. Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers. \textit{Solar Energy Materials and Solar Cells}. AMSTERDAM, NETHERLANDS: ELSEVIER SCIENCE BV, 2017, roč.~166, July, s.~140-146. ISSN~0927-0248. Dostupné z: https://dx.doi.org/10.1016/j.solmat.2017.02.033.

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