Optical characterization of SiO2 thin films using universal
dispersion model over wide spectral range

D 2016

Optical characterization of SiO2 thin films using universal dispersion model over wide spectral range

FRANTA, Daniel, David NEČAS, Ivan OHLÍDAL a Angelo GIGLIA

Základní údaje

Originální název

Optical characterization of SiO2 thin films using universal dispersion model over wide spectral range

Název česky

Optická charakterizace tenkých vrstev SiO2 pomocí univerzálního disperzního modelu v širokém spektrálním oboru

Autoři

FRANTA, Daniel (203 Česká republika, garant, domácí), David NEČAS (203 Česká republika, domácí), Ivan OHLÍDAL (203 Česká republika, domácí) a Angelo GIGLIA (380 Itálie)

Vydání

9890. vyd. BELLINGHAM, Conference on Optical Micro- and Nanometrology VI, od s. "989014-1"-"989014-15", 15 s. 2016

Nakladatel

SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

Další údaje

Jazyk

angličtina

Typ výsledku

Stať ve sborníku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Forma vydání

tištěná verze "print"

Kód RIV

RIV/00216224:14310/16:00094359

Organizační jednotka

Přírodovědecká fakulta

ISBN

978-1-5106-0135-2

ISSN

DOI

http://dx.doi.org/10.1117/12.2227580

UT WoS

000381887800035

Klíčová slova anglicky

optical constants; optical thin films; ellipsometry; spectrophotometry

Štítky

NZ, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 18. 4. 2018 14:36, Mgr. Michal Petr

Anotace

V originále

Vacuum evaporated SiO2 thin films are very important in a design and manufacturing of optical devices produced in optics industry. In this contribution a reliable and precise optical characterization of such SiO2 thin films is performed using the combined method of spectrophotometry at normal incidence and variable-angle spectroscopic ellipsometry applied over spectral range from far IR to extreme UV (0.01-45 eV). This method uses the Universal Dispersion Model based on parametrization of the joint density of states and structural model comprising film defects such as nanometric boundary roughness, inhomogeneity and area non-uniformity. The optical characterization over the wide spectral range provides not only the spectral dependencies of the optical constants of the films within the wide range but, more significantly, it enables their correct and precise determination within the spectral range of interest, i.e. the range of their transparency. Furthermore, measurements in the ranges of film absorption, i. e. phonon excitations in IR and electron excitations in UV, reveal information about the material structure. The results of the optical characterization of the SiO2 thin films prepared on silicon single crystal substrates under various technological conditions are presented in detail for two selected samples. Beside film thicknesses and values of dispersion parameters and spectral dependencies of the optical constants of the SiO2 films, the characterization also enables quantification of film defects and their parameters are presented as well. The results concerning the optical constants of SiO2 films are compared with silica optical constants determined in our earlier studies.

Návaznosti

ED1.1.00/02.0068, projekt VaV

Název: CEITEC - central european institute of technology

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

TA02010784, projekt VaV

Název: Optimalizace vrstevnatých systémů používaných v optickém průmyslu

Investor: Technologická agentura ČR, Optimalizace vrstevnatých systémů používaných v optickém průmyslu

Citovat

FRANTA, Daniel, David NEČAS, Ivan OHLÍDAL a Angelo GIGLIA. Optical characterization of SiO2 thin films using universal dispersion model over wide spectral range. In Gorecki, C; Asundi, AK; Osten, W. Conference on Optical Micro- and Nanometrology VI. 9890. vyd. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, 2016, s. "989014-1"-"989014-15", 15 s. ISBN 978-1-5106-0135-2. Dostupné z: https://dx.doi.org/10.1117/12.2227580.

@inproceedings{1384148,
   author = {Franta, Daniel and Nečas, David and Ohlídal, Ivan and Giglia, Angelo},
   address = {BELLINGHAM},
   booktitle = {Conference on Optical Micro- and Nanometrology VI},
   doi = {http://dx.doi.org/10.1117/12.2227580},
   edition = {9890},
   editor = {Gorecki, C; Asundi, AK; Osten, W},
   keywords = {optical constants; optical thin films; ellipsometry; spectrophotometry},
   howpublished = {tištěná verze "print"},
   language = {eng},
   location = {BELLINGHAM},
   isbn = {978-1-5106-0135-2},
   pages = {"989014-1"-"989014-15"},
   publisher = {SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA},
   title = {Optical characterization of SiO2 thin films using universal dispersion model over wide spectral range},
   year = {2016}
}

TY  - JOUR
ID  - 1384148
AU  - Franta, Daniel - Nečas, David - Ohlídal, Ivan - Giglia, Angelo
PY  - 2016
TI  - Optical characterization of SiO2 thin films using universal dispersion model over wide spectral range
PB  - SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
CY  - BELLINGHAM
SN  - 9781510601352
KW  - optical constants
KW  - optical thin films
KW  - ellipsometry
KW  - spectrophotometry
N2  - Vacuum evaporated SiO2 thin films are very important in a design and manufacturing of optical devices produced in optics industry. In this contribution a reliable and precise optical characterization of such SiO2 thin films is performed using the combined method of spectrophotometry at normal incidence and variable-angle spectroscopic ellipsometry applied over spectral range from far IR to extreme UV (0.01-45 eV). This method uses the Universal Dispersion Model based on parametrization of the joint density of states and structural model comprising film defects such as nanometric boundary roughness, inhomogeneity and area non-uniformity. The optical characterization over the wide spectral range provides not only the spectral dependencies of the optical constants of the films within the wide range but, more significantly, it enables their correct and precise determination within the spectral range of interest, i.e. the range of their transparency. Furthermore, measurements in the ranges of film absorption, i. e. phonon excitations in IR and electron excitations in UV, reveal information about the material structure. The results of the optical characterization of the SiO2 thin films prepared on silicon single crystal substrates under various technological conditions are presented in detail for two selected samples. Beside film thicknesses and values of dispersion parameters and spectral dependencies of the optical constants of the SiO2 films, the characterization also enables quantification of film defects and their parameters are presented as well. The results concerning the optical constants of SiO2 films are compared with silica optical constants determined in our earlier studies.
ER  -

FRANTA, Daniel, David NEČAS, Ivan OHLÍDAL a Angelo GIGLIA. Optical characterization of SiO2 thin films using universal dispersion model over wide spectral range. In Gorecki, C; Asundi, AK; Osten, W. \textit{Conference on Optical Micro- and Nanometrology VI}. 9890. vyd. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA, 2016, s.~''989014-1''-''989014-15'', 15 s. ISBN~978-1-5106-0135-2. Dostupné z: https://dx.doi.org/10.1117/12.2227580.

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