Characterization of Ar/N-2/H-2 middle-pressure RF discharge and
application of the afterglow region for nitridation of GaAs

J 2017

Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs

RAUD, Jüri, Indrek JÖGI, L. MATISEN, Zdeněk NAVRÁTIL, R. TALVISTE et. al.

Základní údaje

Originální název

Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs

Název česky

Charakterizace RF výboje v Ar/N2/H2 za středního tlaku a aplikace dohasínající oblasti pro nitridaci GaAs

Autoři

RAUD, Jüri (233 Estonsko, domácí), Indrek JÖGI (233 Estonsko), L. MATISEN (233 Estonsko), Zdeněk NAVRÁTIL (203 Česká republika, domácí), R. TALVISTE (233 Estonsko), David TRUNEC (203 Česká republika, garant, domácí) a J. AARIK (233 Estonsko)

Vydání

Journal of Physics D: Applied Physics, Bristol, England, IOP Publishing Ltd. 2017, 0022-3727

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10305 Fluids and plasma physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Impakt faktor

Impact factor: 2.373

Kód RIV

RIV/00216224:14310/17:00098826

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1088/1361-6463/aa9635

UT WoS

000415951300001

Klíčová slova česky

RF výboj; charakterizace plazmatuů nitridace GaAs

Klíčová slova anglicky

RF discharge; plasma characteristics; GaAs nitridation

Štítky

NZ, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 5. 4. 2018 10:08, Ing. Nicole Zrilić

Anotace

V originále

This work characterizes the production and destruction of nitrogen and hydrogen atoms in RF capacitively coupled middle-pressure discharge in argon/nitrogen/hydrogen mixtures. Input power, electron concentration, electric field strength and mean electron energy were determined on the basis of electrical measurements. Gas temperature and concentration of Ar atoms in 1s states were determined from spectral measurements. On the basis of experimentally determined plasma characteristics, main production and loss mechanisms of H and N atoms were discussed. The plasma produced radicals were applied for the nitridation and oxide reduction of gallium arsenide in the afterglow region of discharge. After plasma treatment the GaAs samples were analyzed using x-ray photoelectron spectroscopy (XPS) technique. Successful nitridation of GaAs sample was obtained in the case of Ar/5% N-2 discharge. In this gas mixture the N atoms were generated via dissociative recombination of N-2(+) created by charge transfer from Ar+. The treatment in Ar/5% N-2/1% H-2 mixture resulted in the reduction of oxide signals in the XPS spectra. Negligible formation of GaN in the latter mixture was connected with reduced concentration of N atoms, which was, in turn, due to less efficient mechanism of N atom production (electron impact dissociation of N-2 molecules) and additional loss channel in reaction with H-2.

Návaznosti

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

RAUD, Jüri, Indrek JÖGI, L. MATISEN, Zdeněk NAVRÁTIL, R. TALVISTE, David TRUNEC a J. AARIK. Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs. Journal of Physics D: Applied Physics. Bristol, England: IOP Publishing Ltd., 2017, roč. 50, č. 50, s. 505201-505210. ISSN 0022-3727. Dostupné z: https://dx.doi.org/10.1088/1361-6463/aa9635.

@article{1399333,
   author = {Raud, Jüri and Jögi, Indrek and Matisen, L. and Navrátil, Zdeněk and Talviste, R. and Trunec, David and Aarik, J.},
   article_location = {Bristol, England},
   article_number = {50},
   doi = {http://dx.doi.org/10.1088/1361-6463/aa9635},
   keywords = {RF discharge; plasma characteristics; GaAs nitridation},
   language = {eng},
   issn = {0022-3727},
   journal = {Journal of Physics D: Applied Physics},
   title = {Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs},
   volume = {50},
   year = {2017}
}

TY  - JOUR
ID  - 1399333
AU  - Raud, Jüri - Jögi, Indrek - Matisen, L. - Navrátil, Zdeněk - Talviste, R. - Trunec, David - Aarik, J.
PY  - 2017
TI  - Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs
JF  - Journal of Physics D: Applied Physics
VL  - 50
IS  - 50
SP  - 505201
EP  - 505201
PB  - IOP Publishing Ltd.
SN  - 00223727
KW  - RF discharge
KW  - plasma characteristics
KW  - GaAs nitridation
N2  - This work characterizes the production and destruction of nitrogen and hydrogen atoms in RF capacitively coupled middle-pressure discharge in argon/nitrogen/hydrogen mixtures. Input power, electron concentration, electric field strength and mean electron energy were determined on the basis of electrical measurements. Gas temperature and concentration of Ar atoms in 1s states were determined from spectral measurements. On the basis of experimentally determined plasma characteristics, main production and loss mechanisms of H and N atoms were discussed. The plasma produced radicals were applied for the nitridation and oxide reduction of gallium arsenide in the afterglow region of discharge. After plasma treatment the GaAs samples were analyzed using x-ray photoelectron spectroscopy (XPS) technique. Successful nitridation of GaAs sample was obtained in the case of Ar/5% N-2 discharge. In this gas mixture the N atoms were generated via dissociative recombination of N-2(+) created by charge transfer from Ar+. The treatment in Ar/5% N-2/1% H-2 mixture resulted in the reduction of oxide signals in the XPS spectra. Negligible formation of GaN in the latter mixture was connected with reduced concentration of N atoms, which was, in turn, due to less efficient mechanism of N atom production (electron impact dissociation of N-2 molecules) and additional loss channel in reaction with H-2.
ER  -

RAUD, Jüri, Indrek JÖGI, L. MATISEN, Zdeněk NAVRÁTIL, R. TALVISTE, David TRUNEC a J. AARIK. Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs. \textit{Journal of Physics D: Applied Physics}. Bristol, England: IOP Publishing Ltd., 2017, roč.~50, č.~50, s.~505201-505210. ISSN~0022-3727. Dostupné z: https://dx.doi.org/10.1088/1361-6463/aa9635.

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