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@article{1399383, author = {Wang, Chennan and Caha, Ondřej and Münz, Filip and Kostelník, Petr and Novák, Tomáš and Humlíček, Josef}, article_location = {Amsterdam}, article_number = {November}, doi = {http://dx.doi.org/10.1016/j.apsusc.2017.02.056}, keywords = {Gallium nitride; Alloy; Semiconductor; Thin film; Wafer; MOCVD; Silicon; Infrared spectroscopy; Phonon; Ellipsometry; XRD; Raman}, language = {eng}, issn = {0169-4332}, journal = {Applied Surface Science}, title = {Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures}, url = {http://www.sciencedirect.com/science/article/pii/S0169433217304075}, volume = {421}, year = {2017} }
TY - JOUR ID - 1399383 AU - Wang, Chennan - Caha, Ondřej - Münz, Filip - Kostelník, Petr - Novák, Tomáš - Humlíček, Josef PY - 2017 TI - Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures JF - Applied Surface Science VL - 421 IS - November SP - 859-865 EP - 859-865 PB - Elsevier Science SN - 01694332 KW - Gallium nitride KW - Alloy KW - Semiconductor KW - Thin film KW - Wafer KW - MOCVD KW - Silicon KW - Infrared spectroscopy KW - Phonon KW - Ellipsometry KW - XRD KW - Raman UR - http://www.sciencedirect.com/science/article/pii/S0169433217304075 N2 - We report an investigation of the optical and structural properties of wurtzite phase AlxGa1-xN/AlN structure grown on Si(111) within the compositional range of 0 <= x <= 1. The study focuses on providing essential physical quantities for the fabrication process control, namely the composition dependence of phonon mode energy and refractive index. Three complementary techniques, infrared ellipsometry, Raman spectroscopy and X-ray diffraction, have been used to minimize uncertainties in our analysis. Based on the high quality and nearly strain-free AlxGa1-xN/AlN double layer samples, we determined the calibration curve for the A(1)(LO) phonon mode. We have also constructed the ellipsometry model which uses a-priori knowledge of experimentally measured A(1)(TO) phonon mode frequencies. From the best model fit to the collected ellipsometry spectra of the entire sample series, we obtained the anisotropic refractive indices of the AlxGa1-xN alloys with a very satisfactory accuracy. (C) 2017 Elsevier B.V. All rights reserved. ER -
WANG, Chennan, Ondřej CAHA, Filip MÜNZ, Petr KOSTELNÍK, Tomáš NOVÁK a Josef HUMLÍČEK. Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures. \textit{Applied Surface Science}. Amsterdam: Elsevier Science, 2017, roč.~421, November, s.~859-865. ISSN~0169-4332. Dostupné z: https://dx.doi.org/10.1016/j.apsusc.2017.02.056.
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