Mid-infrared ellipsometry, Raman and X-ray diffraction studies
of AlxGa1-xN/AlN/Si structures

J 2017

Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures

WANG, Chennan, Ondřej CAHA, Filip MÜNZ, Petr KOSTELNÍK, Tomáš NOVÁK et. al.

Základní údaje

Originální název

Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures

Název česky

Studie vrstev AlxGa1-xN/AlN/Si pomocí infračervené elipsometrie, Ramanova rozptylu a rtg difrakce

Autoři

WANG, Chennan (156 Čína, garant, domácí), Ondřej CAHA (203 Česká republika, domácí), Filip MÜNZ (203 Česká republika, domácí), Petr KOSTELNÍK (203 Česká republika), Tomáš NOVÁK (203 Česká republika) a Josef HUMLÍČEK (203 Česká republika, domácí)

Vydání

Applied Surface Science, Amsterdam, Elsevier Science, 2017, 0169-4332

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 4.439

Kód RIV

RIV/00216224:14310/17:00094403

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1016/j.apsusc.2017.02.056

UT WoS

000408756700093

Klíčová slova anglicky

Gallium nitride; Alloy; Semiconductor; Thin film; Wafer; MOCVD; Silicon; Infrared spectroscopy; Phonon; Ellipsometry; XRD; Raman

Štítky

ellipsometry, Gallium Nitride, infrared spectroscopy, NZ, Raman, rivok, XRD

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 9. 4. 2018 11:10, Ing. Nicole Zrilić

Anotace

V originále

We report an investigation of the optical and structural properties of wurtzite phase AlxGa1-xN/AlN structure grown on Si(111) within the compositional range of 0 <= x <= 1. The study focuses on providing essential physical quantities for the fabrication process control, namely the composition dependence of phonon mode energy and refractive index. Three complementary techniques, infrared ellipsometry, Raman spectroscopy and X-ray diffraction, have been used to minimize uncertainties in our analysis. Based on the high quality and nearly strain-free AlxGa1-xN/AlN double layer samples, we determined the calibration curve for the A(1)(LO) phonon mode. We have also constructed the ellipsometry model which uses a-priori knowledge of experimentally measured A(1)(TO) phonon mode frequencies. From the best model fit to the collected ellipsometry spectra of the entire sample series, we obtained the anisotropic refractive indices of the AlxGa1-xN alloys with a very satisfactory accuracy. (C) 2017 Elsevier B.V. All rights reserved.

Návaznosti

TH01011284, projekt VaV

Název: Nové polovodičové materiály a součástky s velkou šířkou zakázaného pásu

Investor: Technologická agentura ČR, Nové polovodičové materiály a součástky s velkou šířkou zakázaného pásu

Citovat

WANG, Chennan, Ondřej CAHA, Filip MÜNZ, Petr KOSTELNÍK, Tomáš NOVÁK a Josef HUMLÍČEK. Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures. Applied Surface Science. Amsterdam: Elsevier Science, 2017, roč. 421, November, s. 859-865. ISSN 0169-4332. Dostupné z: https://dx.doi.org/10.1016/j.apsusc.2017.02.056.

@article{1399383,
   author = {Wang, Chennan and Caha, Ondřej and Münz, Filip and Kostelník, Petr and Novák, Tomáš and Humlíček, Josef},
   article_location = {Amsterdam},
   article_number = {November},
   doi = {http://dx.doi.org/10.1016/j.apsusc.2017.02.056},
   keywords = {Gallium nitride; Alloy; Semiconductor; Thin film; Wafer; MOCVD; Silicon; Infrared spectroscopy; Phonon; Ellipsometry; XRD; Raman},
   language = {eng},
   issn = {0169-4332},
   journal = {Applied Surface Science},
   title = {Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures},
   url = {http://www.sciencedirect.com/science/article/pii/S0169433217304075},
   volume = {421},
   year = {2017}
}

TY  - JOUR
ID  - 1399383
AU  - Wang, Chennan - Caha, Ondřej - Münz, Filip - Kostelník, Petr - Novák, Tomáš - Humlíček, Josef
PY  - 2017
TI  - Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures
JF  - Applied Surface Science
VL  - 421
IS  - November
SP  - 859-865
EP  - 859-865
PB  - Elsevier Science
SN  - 01694332
KW  - Gallium nitride
KW  - Alloy
KW  - Semiconductor
KW  - Thin film
KW  - Wafer
KW  - MOCVD
KW  - Silicon
KW  - Infrared spectroscopy
KW  - Phonon
KW  - Ellipsometry
KW  - XRD
KW  - Raman
UR  - http://www.sciencedirect.com/science/article/pii/S0169433217304075
N2  - We report an investigation of the optical and structural properties of wurtzite phase AlxGa1-xN/AlN structure grown on Si(111) within the compositional range of 0 <= x <= 1. The study focuses on providing essential physical quantities for the fabrication process control, namely the composition dependence of phonon mode energy and refractive index. Three complementary techniques, infrared ellipsometry, Raman spectroscopy and X-ray diffraction, have been used to minimize uncertainties in our analysis. Based on the high quality and nearly strain-free AlxGa1-xN/AlN double layer samples, we determined the calibration curve for the A(1)(LO) phonon mode. We have also constructed the ellipsometry model which uses a-priori knowledge of experimentally measured A(1)(TO) phonon mode frequencies. From the best model fit to the collected ellipsometry spectra of the entire sample series, we obtained the anisotropic refractive indices of the AlxGa1-xN alloys with a very satisfactory accuracy. (C) 2017 Elsevier B.V. All rights reserved.
ER  -

WANG, Chennan, Ondřej CAHA, Filip MÜNZ, Petr KOSTELNÍK, Tomáš NOVÁK a Josef HUMLÍČEK. Mid-infrared ellipsometry, Raman and X-ray diffraction studies of AlxGa1-xN/AlN/Si structures. \textit{Applied Surface Science}. Amsterdam: Elsevier Science, 2017, roč.~421, November, s.~859-865. ISSN~0169-4332. Dostupné z: https://dx.doi.org/10.1016/j.apsusc.2017.02.056.

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