Stress-free deposition of [001] preferentially oriented
titanium thin film by Kaufman ion-beam source

J 2017

Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

GABLECH, I., Ondřej CAHA, V. SVATOS, J. PEKAREK, P. NEUZIL et. al.

Základní údaje

Originální název

Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source

Autoři

GABLECH, I. (203 Česká republika), Ondřej CAHA (203 Česká republika, garant, domácí), V. SVATOS (203 Česká republika), J. PEKAREK (203 Česká republika), P. NEUZIL (203 Česká republika) a Tomáš ŠIKOLA (203 Česká republika)

Vydání

Thin Solid Films, Lausanne, Elsevier science, 2017, 0040-6090

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Švýcarsko

Utajení

není předmětem státního či obchodního tajemství

Impakt faktor

Impact factor: 1.939

Kód RIV

RIV/00216224:14310/17:00099462

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1016/j.tsf.2017.07.039

UT WoS

000411775900008

Klíčová slova anglicky

Ion-beam sputtering deposition; Kaufman ion-beam source; Titanium thin film; [001] preferential orientation; Residual stress; Rocking curve

Štítky

NZ, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 11. 4. 2018 23:49, Ing. Nicole Zrilić

Anotace

V originále

We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (1) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using X-ray diffraction and X-ray reflectivity measurements. We showed that the Ti film deposited at T approximate to 273 degrees C was stress free with corresponding lattice parameters.ao and co of (2.954 +/- 0.003) angstrom and (4.695 +/- 0.001) angstrom, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c-axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from 0.58 nm to 0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems. (C) 2017 Elsevier B.V. All rights reserved.

Návaznosti

LM2015041, projekt VaV

Název: CEITEC Nano

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CEITEC Nano

Citovat

GABLECH, I., Ondřej CAHA, V. SVATOS, J. PEKAREK, P. NEUZIL a Tomáš ŠIKOLA. Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source. Thin Solid Films. Lausanne: Elsevier science, 2017, roč. 638, September, s. 57-62. ISSN 0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2017.07.039.

@article{1403949,
   author = {Gablech, I. and Caha, Ondřej and Svatos, V. and Pekarek, J. and Neuzil, P. and Šikola, Tomáš},
   article_location = {Lausanne},
   article_number = {September},
   doi = {http://dx.doi.org/10.1016/j.tsf.2017.07.039},
   keywords = {Ion-beam sputtering deposition; Kaufman ion-beam source; Titanium thin film; [001] preferential orientation; Residual stress; Rocking curve},
   language = {eng},
   issn = {0040-6090},
   journal = {Thin Solid Films},
   title = {Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source},
   volume = {638},
   year = {2017}
}

TY  - JOUR
ID  - 1403949
AU  - Gablech, I. - Caha, Ondřej - Svatos, V. - Pekarek, J. - Neuzil, P. - Šikola, Tomáš
PY  - 2017
TI  - Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source
JF  - Thin Solid Films
VL  - 638
IS  - September
SP  - 57-62
EP  - 57-62
PB  - Elsevier science
SN  - 00406090
KW  - Ion-beam sputtering deposition
KW  - Kaufman ion-beam source
KW  - Titanium thin film
KW  - [001] preferential orientation
KW  - Residual stress
KW  - Rocking curve
N2  - We proposed a method to control and minimize residual stress in [001] preferentially oriented Ti thin films deposited by a Kaufman ion-beam source using a substrate temperature during deposition (1) as the parameter. We determined the residual stress, corresponding lattice parameters, and thickness of deposited films using X-ray diffraction and X-ray reflectivity measurements. We showed that the Ti film deposited at T approximate to 273 degrees C was stress free with corresponding lattice parameters.ao and co of (2.954 +/- 0.003) angstrom and (4.695 +/- 0.001) angstrom, respectively. The stress-free sample has the superior crystallographic quality and pure [001] orientation. The Ti thin films were oriented with the c-axis parallel to the surface normal. We also investigated root mean square of surface roughness of deposited films by atomic force microscopy and it was in the range from 0.58 nm to 0.71 nm. Such smooth and stress-free layers are suitable for microelectromechanical systems. (C) 2017 Elsevier B.V. All rights reserved.
ER  -

GABLECH, I., Ondřej CAHA, V. SVATOS, J. PEKAREK, P. NEUZIL a Tomáš ŠIKOLA. Stress-free deposition of [001] preferentially oriented titanium thin film by Kaufman ion-beam source. \textit{Thin Solid Films}. Lausanne: Elsevier science, 2017, roč.~638, September, s.~57-62. ISSN~0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2017.07.039.

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