Ellipsometric and reflectometric characterization of thin films
exhibiting thickness non-uniformity and boundary roughness

J 2017

Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness

OHLÍDAL, Ivan, Daniel FRANTA a David NEČAS

Základní údaje

Originální název

Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness

Autoři

OHLÍDAL, Ivan (203 Česká republika, garant, domácí), Daniel FRANTA (203 Česká republika, domácí) a David NEČAS (203 Česká republika, domácí)

Vydání

Applied Surface Science, AMSTERDAM, NETHERLANDS, Elsevier Science BV, 2017, 0169-4332

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 4.439

Kód RIV

RIV/00216224:14310/17:00094430

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1016/j.apsusc.2016.10.186

UT WoS

000408756700066

Klíčová slova anglicky

Optical constants;Ellipsometry;Spectrophotometry;Thin films;Roughness;Non-uniformity

Štítky

NZ, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 3. 4. 2018 13:55, Ing. Nicole Zrilić

Anotace

V originále

In this paper epitaxial ZnSe thin films prepared by molecular beam epitaxy onto GaAs single crystal substrates exhibiting two defects, i.e. boundary roughness and thickness non-uniformity, are optically characterized using a combination of spectroscopic ellipsometry and near-normal spectroscopic reflectometry. The influence of boundary roughness is included into optical quantity formulae by the combination of the scalar diffraction theory and Rayleigh-Rice theory. Thickness non-uniformity is incorporated by means of averaging the elements of the unnormalized Mueller matrices. The universal dispersion model of the optical constants of the ZnSe thin films based on parametrization of the joint density of electronic states is used. Very thin overalyers modeled by rough thin films with identically rough boundaries are taken into account on the upper boundaries of the ZnSe thin films. The spectral dependencies of the optical constants of the ZnSe thin films are determined within the wide spectral region (0.6–8.7 eV). Moreover, the mean thickness of the ZnSe thin films and thickness of overlayers are determined together with the other structural parameters characterizing the defects. The values of roughness parameters, determined by the optical method, are verified by a comparison with results achieved by atomic force microscopy. It is also shown that approximations of the local reflection coefficients presented are usable for processing the experimental data.

Návaznosti

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LQ1601, projekt VaV

Název: CEITEC 2020 (Akronym: CEITEC2020)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CEITEC 2020

TA02010784, projekt VaV

Název: Optimalizace vrstevnatých systémů používaných v optickém průmyslu

Investor: Technologická agentura ČR, Optimalizace vrstevnatých systémů používaných v optickém průmyslu

Citovat

OHLÍDAL, Ivan, Daniel FRANTA a David NEČAS. Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness. Applied Surface Science. AMSTERDAM, NETHERLANDS: Elsevier Science BV, 2017, roč. 421, November, s. 687-696. ISSN 0169-4332. Dostupné z: https://dx.doi.org/10.1016/j.apsusc.2016.10.186.

@article{1409184,
   author = {Ohlídal, Ivan and Franta, Daniel and Nečas, David},
   article_location = {AMSTERDAM, NETHERLANDS},
   article_number = {November},
   doi = {http://dx.doi.org/10.1016/j.apsusc.2016.10.186},
   keywords = {Optical constants;Ellipsometry;Spectrophotometry;Thin films;Roughness;Non-uniformity},
   language = {eng},
   issn = {0169-4332},
   journal = {Applied Surface Science},
   title = {Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness},
   url = {https://www.sciencedirect.com/science/article/pii/S0169433216323224},
   volume = {421},
   year = {2017}
}

TY  - JOUR
ID  - 1409184
AU  - Ohlídal, Ivan - Franta, Daniel - Nečas, David
PY  - 2017
TI  - Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness
JF  - Applied Surface Science
VL  - 421
IS  - November
SP  - 687-696
EP  - 687-696
PB  - Elsevier Science BV
SN  - 01694332
KW  - Optical constants;Ellipsometry;Spectrophotometry;Thin films;Roughness;Non-uniformity
UR  - https://www.sciencedirect.com/science/article/pii/S0169433216323224
N2  - In this paper epitaxial ZnSe thin films prepared by molecular beam epitaxy onto GaAs single crystal substrates exhibiting two defects, i.e. boundary roughness and thickness non-uniformity, are optically characterized using a combination of spectroscopic ellipsometry and near-normal spectroscopic reflectometry. The influence of boundary roughness is included into optical quantity formulae by the combination of the scalar diffraction theory and Rayleigh-Rice theory. Thickness non-uniformity is incorporated by means of averaging the elements of the unnormalized Mueller matrices. The universal dispersion model of the optical constants of the ZnSe thin films based on parametrization of the joint density of electronic states is used. Very thin overalyers modeled by rough thin films with identically rough boundaries are taken into account on the upper boundaries of the ZnSe thin films. The spectral dependencies of the optical constants of the ZnSe thin films are determined within the wide spectral region (0.6–8.7 eV). Moreover, the mean thickness of the ZnSe thin films and thickness of overlayers are determined together with the other structural parameters characterizing the defects. The values of roughness parameters, determined by the optical method, are verified by a comparison with results achieved by atomic force microscopy. It is also shown that approximations of the local reflection coefficients presented are usable for processing the experimental data.
ER  -

OHLÍDAL, Ivan, Daniel FRANTA a David NEČAS. Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness. \textit{Applied Surface Science}. AMSTERDAM, NETHERLANDS: Elsevier Science BV, 2017, roč.~421, November, s.~687-696. ISSN~0169-4332. Dostupné z: https://dx.doi.org/10.1016/j.apsusc.2016.10.186.

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