Temperature-dependent dispersion model of float zone
crystalline silicon

J 2017

Temperature-dependent dispersion model of float zone crystalline silicon

FRANTA, Daniel, Adam DUBROKA, Chennan WANG, Angelo GIGLIA, Jiří VOHÁNKA et. al.

Základní údaje

Originální název

Temperature-dependent dispersion model of float zone crystalline silicon

Autoři

FRANTA, Daniel (203 Česká republika, garant, domácí), Adam DUBROKA (203 Česká republika, domácí), Chennan WANG (156 Čína, domácí), Angelo GIGLIA (380 Itálie), Jiří VOHÁNKA (203 Česká republika, domácí), Pavel FRANTA (203 Česká republika, domácí) a Ivan OHLÍDAL (203 Česká republika, domácí)

Vydání

Applied Surface Science, Amsterdam, Elsevier Science, 2017, 0169-4332

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 4.439

Kód RIV

RIV/00216224:14310/17:00094432

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1016/j.apsusc.2017.02.021

UT WoS

000408756700023

Klíčová slova anglicky

Crystalline silicon;Optical constants;Temperature dependence;Ellipsometry;Spectrophotometry;Sum rule

Štítky

NZ, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 12. 4. 2018 11:59, Ing. Nicole Zrilić

Anotace

V originále

In this paper, we present the temperature dependent dispersion model of float zone crystalline silicon. The theoretical background for valence electronic excitations is introduced in the theoretical part of this paper. This model is based on application of sum rules and parametrization of transition strength functions corresponding to the individual elemental phonon and electronic excitations. The parameters of the model are determined by fitting ellipsometric and spectrophotometric experimental data in the spectral range from far infrared (70 cm-1) to extreme ultraviolet (40 eV). The ellipsometric data were measured in the temperature range 5-700 K. The excitations of the valence electrons to the conduction band are divided into the indirect and direct electronic transitions. The indirect transitions are modeled by truncated Lorentzian terms, whereas the direct transitions are modeled using Gaussian broadened piecewise smooth functions representing 3D and 2D van Hove singularities modified by excitonic effects. Since the experimental data up to high energies (40 eV) are available, we are able to determine the value of the effective number of valence electrons. The Tauc-Lorentz dispersion model is used for modeling high energy electron excitations. Two slightly different values of the effective number of valence electrons are obtained for the Jellison-Modine (4.51) and Campi-Coriasso (4.37) parametrization. Our goal is to obtain the model of dielectric response of crystalline silicon which depends only on photon energy, temperature and small number of material parameters, e.g. the concentration of substituted carbon and interstitial oxygen. The model presented in this paper is accurate enough to replace tabulated values of c-Si optical constants used in the optical characterization of thin films placed onto silicon substrates. The spectral dependencies of the optical constants obtained in our work are compared to results obtained by other authors.

Návaznosti

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LQ1601, projekt VaV

Název: CEITEC 2020 (Akronym: CEITEC2020)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CEITEC 2020

TA02010784, projekt VaV

Název: Optimalizace vrstevnatých systémů používaných v optickém průmyslu

Investor: Technologická agentura ČR, Optimalizace vrstevnatých systémů používaných v optickém průmyslu

Citovat

FRANTA, Daniel, Adam DUBROKA, Chennan WANG, Angelo GIGLIA, Jiří VOHÁNKA, Pavel FRANTA a Ivan OHLÍDAL. Temperature-dependent dispersion model of float zone crystalline silicon. Applied Surface Science. Amsterdam: Elsevier Science, 2017, roč. 421, November, s. 405-419. ISSN 0169-4332. Dostupné z: https://dx.doi.org/10.1016/j.apsusc.2017.02.021.

@article{1409192,
   author = {Franta, Daniel and Dubroka, Adam and Wang, Chennan and Giglia, Angelo and Vohánka, Jiří and Franta, Pavel and Ohlídal, Ivan},
   article_location = {Amsterdam},
   article_number = {November},
   doi = {http://dx.doi.org/10.1016/j.apsusc.2017.02.021},
   keywords = {Crystalline silicon;Optical constants;Temperature dependence;Ellipsometry;Spectrophotometry;Sum rule},
   language = {eng},
   issn = {0169-4332},
   journal = {Applied Surface Science},
   title = {Temperature-dependent dispersion model of float zone crystalline silicon},
   url = {https://www.sciencedirect.com/science/article/pii/S0169433217303720},
   volume = {421},
   year = {2017}
}

TY  - JOUR
ID  - 1409192
AU  - Franta, Daniel - Dubroka, Adam - Wang, Chennan - Giglia, Angelo - Vohánka, Jiří - Franta, Pavel - Ohlídal, Ivan
PY  - 2017
TI  - Temperature-dependent dispersion model of float zone crystalline silicon
JF  - Applied Surface Science
VL  - 421
IS  - November
SP  - 405-419
EP  - 405-419
PB  - Elsevier Science
SN  - 01694332
KW  - Crystalline silicon;Optical constants;Temperature dependence;Ellipsometry;Spectrophotometry;Sum rule
UR  - https://www.sciencedirect.com/science/article/pii/S0169433217303720
L2  - https://www.sciencedirect.com/science/article/pii/S0169433217303720
N2  - In this paper, we present the temperature dependent dispersion model of float zone crystalline silicon. The theoretical background for valence electronic excitations is introduced in the theoretical part of this paper. This model is based on application of sum rules and parametrization of transition strength functions corresponding to the individual elemental phonon and electronic excitations. The parameters of the model are determined by fitting ellipsometric and spectrophotometric experimental data in the spectral range from far infrared (70 cm-1) to extreme ultraviolet (40 eV). The ellipsometric data were measured in the temperature range 5-700 K. The excitations of the valence electrons to the conduction band are divided into the indirect and direct electronic transitions. The indirect transitions are modeled by truncated Lorentzian terms, whereas the direct transitions are modeled using Gaussian broadened piecewise smooth functions representing 3D and 2D van Hove singularities modified by excitonic effects. Since the experimental data up to high energies (40 eV) are available, we are able to determine the value of the effective number of valence electrons. The Tauc-Lorentz dispersion model is used for modeling high energy electron excitations. Two slightly different values of the effective number of valence electrons are obtained for the Jellison-Modine (4.51) and Campi-Coriasso (4.37) parametrization. Our goal is to obtain the model of dielectric response of crystalline silicon which depends only on photon energy, temperature and small number of material parameters, e.g. the concentration of substituted carbon and interstitial oxygen. The model presented in this paper is accurate enough to replace tabulated values of c-Si optical constants used in the optical characterization of thin films placed onto silicon substrates. The spectral dependencies of the optical constants obtained in our work are compared to results obtained by other authors.
ER  -

FRANTA, Daniel, Adam DUBROKA, Chennan WANG, Angelo GIGLIA, Jiří VOHÁNKA, Pavel FRANTA a Ivan OHLÍDAL. Temperature-dependent dispersion model of float zone crystalline silicon. \textit{Applied Surface Science}. Amsterdam: Elsevier Science, 2017, roč.~421, November, s.~405-419. ISSN~0169-4332. Dostupné z: https://dx.doi.org/10.1016/j.apsusc.2017.02.021.

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