Liquid assisted plasma enhanced chemical vapour deposition with
a non-thermal plasma jet at atmospheric pressure

J 2017

Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure

SCHÄFER, Jan, Katja FRICKE, František MIKA, Zuzana POKORNÁ, Lenka ZAJÍČKOVÁ et. al.

Základní údaje

Originální název

Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure

Autoři

SCHÄFER, Jan (203 Česká republika), Katja FRICKE (276 Německo), František MIKA (203 Česká republika), Zuzana POKORNÁ (203 Česká republika), Lenka ZAJÍČKOVÁ (203 Česká republika, garant, domácí) a Rudiger FOEST (276 Německo)

Vydání

Thin Solid Films, Lausanne, Elsevier science, 2017, 0040-6090

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10305 Fluids and plasma physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.939

Kód RIV

RIV/00216224:14740/17:00100437

Organizační jednotka

Středoevropský technologický institut

DOI

http://dx.doi.org/10.1016/j.tsf.2016.09.022

UT WoS

000401080700010

Klíčová slova anglicky

Plasma jet; Liquid assisted plasma enhanced chemical vapour deposition; Silicon oxide; Hexamethyldisiloxane; Octamethyltetrasiloxane; Tetrakis(trimethylsilyloxy)silane

Štítky

OA, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 21. 3. 2018 10:03, Mgr. Pavla Foltynová, Ph.D.

Anotace

V originále

The present study introduces a process for the synthesis of functional films onto substrates directly from the liquid phase. The reported method is based on the initialization of the synthesis by means of an atmospheric pressure plasma jet operating with argon above a thin liquid film of the starting material. The process is demonstrated by the formation of a thin, solid SiOx film from siloxane-based liquid precursors. Changes in the chemical properties of the precursor were studied in-situ during the polymerization process on the diamond crystal by using Fourier transform infrared spectroscopy The elemental composition of the SiOxCy films was analyzed by X-ray photoelectron spectroscopy (XPS). Furthermore, XPS was applied to study the effect of post-annealing processes on the composition of the films. The obtained deposits exhibit a low concentration of carbon groups. The amount of hydroxyl groups and interstitial water can be reduced significantly by post-process annealing of the films. (C) 2016 The Author(s). Published by Elsevier B.V.

Návaznosti

LQ1601, projekt VaV

Název: CEITEC 2020 (Akronym: CEITEC2020)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CEITEC 2020

Přiložené soubory

17schafer_tsf_liquidPECVD.pdf

Požádat o autorskou verzi souboru

Citovat

SCHÄFER, Jan, Katja FRICKE, František MIKA, Zuzana POKORNÁ, Lenka ZAJÍČKOVÁ a Rudiger FOEST. Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure. Thin Solid Films. Lausanne: Elsevier science, 2017, roč. 630, MAY, s. 71-78. ISSN 0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2016.09.022.

@article{1411912,
   author = {Schäfer, Jan and Fricke, Katja and Mika, František and Pokorná, Zuzana and Zajíčková, Lenka and Foest, Rudiger},
   article_location = {Lausanne},
   article_number = {MAY},
   doi = {http://dx.doi.org/10.1016/j.tsf.2016.09.022},
   keywords = {Plasma jet; Liquid assisted plasma enhanced chemical vapour deposition; Silicon oxide; Hexamethyldisiloxane; Octamethyltetrasiloxane; Tetrakis(trimethylsilyloxy)silane},
   language = {eng},
   issn = {0040-6090},
   journal = {Thin Solid Films},
   title = {Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure},
   url = {https://www.sciencedirect.com/science/article/pii/S0040609016305302?via%3Dihub},
   volume = {630},
   year = {2017}
}

TY  - JOUR
ID  - 1411912
AU  - Schäfer, Jan - Fricke, Katja - Mika, František - Pokorná, Zuzana - Zajíčková, Lenka - Foest, Rudiger
PY  - 2017
TI  - Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure
JF  - Thin Solid Films
VL  - 630
IS  - MAY
SP  - 71-78
EP  - 71-78
PB  - Elsevier science
SN  - 00406090
KW  - Plasma jet
KW  - Liquid assisted plasma enhanced chemical vapour deposition
KW  - Silicon oxide
KW  - Hexamethyldisiloxane
KW  - Octamethyltetrasiloxane
KW  - Tetrakis(trimethylsilyloxy)silane
UR  - https://www.sciencedirect.com/science/article/pii/S0040609016305302?via%3Dihub
L2  - https://www.sciencedirect.com/science/article/pii/S0040609016305302?via%3Dihub
N2  - The present study introduces a process for the synthesis of functional films onto substrates directly from the liquid phase. The reported method is based on the initialization of the synthesis by means of an atmospheric pressure plasma jet operating with argon above a thin liquid film of the starting material. The process is demonstrated by the formation of a thin, solid SiOx film from siloxane-based liquid precursors. Changes in the chemical properties of the precursor were studied in-situ during the polymerization process on the diamond crystal by using Fourier transform infrared spectroscopy The elemental composition of the SiOxCy films was analyzed by X-ray photoelectron spectroscopy (XPS). Furthermore, XPS was applied to study the effect of post-annealing processes on the composition of the films. The obtained deposits exhibit a low concentration of carbon groups. The amount of hydroxyl groups and interstitial water can be reduced significantly by post-process annealing of the films. (C) 2016 The Author(s). Published by Elsevier B.V.
ER  -

SCHÄFER, Jan, Katja FRICKE, František MIKA, Zuzana POKORNÁ, Lenka ZAJÍČKOVÁ a Rudiger FOEST. Liquid assisted plasma enhanced chemical vapour deposition with a non-thermal plasma jet at atmospheric pressure. \textit{Thin Solid Films}. Lausanne: Elsevier science, 2017, roč.~630, MAY, s.~71-78. ISSN~0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2016.09.022.

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