Determination of the impact of Bi content on the valence band
energy of GaAsBi using x-ray photoelectron spectroscopy

J 2017

Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

COLLAR, K., J. LI, W. JIAO, Y. GUAN, M. LOSURDO et. al.

Základní údaje

Originální název

Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

Autoři

COLLAR, K. (840 Spojené státy), J. LI (840 Spojené státy), W. JIAO (840 Spojené státy), Y. GUAN (840 Spojené státy), M. LOSURDO (380 Itálie), Josef HUMLÍČEK (203 Česká republika, garant, domácí) a A.S. BROWN (840 Spojené státy)

Vydání

AIP Advances, MELVILLE, AMER INST PHYSICS, 2017, 2158-3226

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

21002 Nano-processes ;

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.653

Kód RIV

RIV/00216224:14310/17:00100440

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1063/1.4986751

UT WoS

000406760200016

Klíčová slova anglicky

MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; GAAS1-XBIX; INTERFACE; GROWTH; GAP

Štítky

NZ, rivok, TWINFUSYON

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 31. 3. 2018 13:40, Ing. Nicole Zrilić

Anotace

V originále

We investigate the change of the valence band energy of GaAs1-xBix as a function of dilute bismuth (Bi) concentration, x, using x-ray photoelectron spectroscopy (XPS). The change in the valence band energy per addition of 1 % Bi is determined for strained and unstrained thin films using a linear approximation applicable to the dilute regime. Spectroscopic ellipsometry (SE) was used as a complementary technique to determine the change in GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that similar to 75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature.

Návaznosti

692034, interní kód MU

Název: TWINFUSYON - Twinning for Improving Capacity of Research in Multifunctional Nanosystems for Optronic Biosensing (Akronym: TWINFUSYON)

Investor: Evropská unie, TWINFUSYON - Twinning for Improving Capacity of Research in Multifunctional Nanosystems for Optronic Biosensing, Spreading excellence and widening participation

Citovat

COLLAR, K., J. LI, W. JIAO, Y. GUAN, M. LOSURDO, Josef HUMLÍČEK a A.S. BROWN. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy. AIP Advances. MELVILLE: AMER INST PHYSICS, 2017, roč. 7, č. 7, s. nestránkováno, 6 s. ISSN 2158-3226. Dostupné z: https://dx.doi.org/10.1063/1.4986751.

@article{1411940,
   author = {Collar, K. and Li, J. and Jiao, W. and Guan, Y. and Losurdo, M. and Humlíček, Josef and Brown, A.S.},
   article_location = {MELVILLE},
   article_number = {7},
   doi = {http://dx.doi.org/10.1063/1.4986751},
   keywords = {MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; GAAS1-XBIX; INTERFACE; GROWTH; GAP},
   language = {eng},
   issn = {2158-3226},
   journal = {AIP Advances},
   title = {Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy},
   url = {https://aip.scitation.org/doi/10.1063/1.4986751},
   volume = {7},
   year = {2017}
}

TY  - JOUR
ID  - 1411940
AU  - Collar, K. - Li, J. - Jiao, W. - Guan, Y. - Losurdo, M. - Humlíček, Josef - Brown, A.S.
PY  - 2017
TI  - Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy
JF  - AIP Advances
VL  - 7
IS  - 7
SP  - nestránkováno
EP  - nestránkováno
PB  - AMER INST PHYSICS
SN  - 21583226
KW  - MOLECULAR-BEAM EPITAXY
KW  - TEMPERATURE-DEPENDENCE
KW  - GAAS1-XBIX
KW  - INTERFACE
KW  - GROWTH
KW  - GAP
UR  - https://aip.scitation.org/doi/10.1063/1.4986751
N2  - We investigate the change of the valence band energy of GaAs1-xBix as a function of dilute bismuth (Bi) concentration, x, using x-ray photoelectron spectroscopy (XPS). The change in the valence band energy per addition of 1 % Bi is determined for strained and unstrained thin films using a linear approximation applicable to the dilute regime. Spectroscopic ellipsometry (SE) was used as a complementary technique to determine the change in GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that similar to 75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature.
ER  -

COLLAR, K., J. LI, W. JIAO, Y. GUAN, M. LOSURDO, Josef HUMLÍČEK a A.S. BROWN. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy. \textit{AIP Advances}. MELVILLE: AMER INST PHYSICS, 2017, roč.~7, č.~7, s.~nestránkováno, 6 s. ISSN~2158-3226. Dostupné z: https://dx.doi.org/10.1063/1.4986751.

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