COLLAR, K., J. LI, W. JIAO, Y. GUAN, M. LOSURDO, Josef HUMLÍČEK a A.S. BROWN. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy. AIP Advances. MELVILLE: AMER INST PHYSICS, 2017, roč. 7, č. 7, s. nestránkováno, 6 s. ISSN 2158-3226. Dostupné z: https://dx.doi.org/10.1063/1.4986751. |
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@article{1411940, author = {Collar, K. and Li, J. and Jiao, W. and Guan, Y. and Losurdo, M. and Humlíček, Josef and Brown, A.S.}, article_location = {MELVILLE}, article_number = {7}, doi = {http://dx.doi.org/10.1063/1.4986751}, keywords = {MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; GAAS1-XBIX; INTERFACE; GROWTH; GAP}, language = {eng}, issn = {2158-3226}, journal = {AIP Advances}, title = {Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy}, url = {https://aip.scitation.org/doi/10.1063/1.4986751}, volume = {7}, year = {2017} }
TY - JOUR ID - 1411940 AU - Collar, K. - Li, J. - Jiao, W. - Guan, Y. - Losurdo, M. - Humlíček, Josef - Brown, A.S. PY - 2017 TI - Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy JF - AIP Advances VL - 7 IS - 7 SP - nestránkováno EP - nestránkováno PB - AMER INST PHYSICS SN - 21583226 KW - MOLECULAR-BEAM EPITAXY KW - TEMPERATURE-DEPENDENCE KW - GAAS1-XBIX KW - INTERFACE KW - GROWTH KW - GAP UR - https://aip.scitation.org/doi/10.1063/1.4986751 N2 - We investigate the change of the valence band energy of GaAs1-xBix as a function of dilute bismuth (Bi) concentration, x, using x-ray photoelectron spectroscopy (XPS). The change in the valence band energy per addition of 1 % Bi is determined for strained and unstrained thin films using a linear approximation applicable to the dilute regime. Spectroscopic ellipsometry (SE) was used as a complementary technique to determine the change in GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that similar to 75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature. ER -
COLLAR, K., J. LI, W. JIAO, Y. GUAN, M. LOSURDO, Josef HUMLÍČEK a A.S. BROWN. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy. \textit{AIP Advances}. MELVILLE: AMER INST PHYSICS, 2017, roč.~7, č.~7, s.~nestránkováno, 6 s. ISSN~2158-3226. Dostupné z: https://dx.doi.org/10.1063/1.4986751.
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