Determination of the impact of Bi content on the valence band
energy of GaAsBi using x-ray photoelectron spectroscopy

J 2017

Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

COLLAR, K., J. LI, W. JIAO, Y. GUAN, M. LOSURDO et. al.

Basic information

Original name

Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

Authors

COLLAR, K. (840 United States of America), J. LI (840 United States of America), W. JIAO (840 United States of America), Y. GUAN (840 United States of America), M. LOSURDO (380 Italy), Josef HUMLÍČEK (203 Czech Republic, guarantor, belonging to the institution) and A.S. BROWN (840 United States of America)

Edition

AIP Advances, MELVILLE, AMER INST PHYSICS, 2017, 2158-3226

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

21002 Nano-processes ;

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 1.653

RIV identification code

RIV/00216224:14310/17:00100440

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1063/1.4986751

UT WoS

000406760200016

Keywords in English

MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; GAAS1-XBIX; INTERFACE; GROWTH; GAP

Abstract

V originále

We investigate the change of the valence band energy of GaAs1-xBix as a function of dilute bismuth (Bi) concentration, x, using x-ray photoelectron spectroscopy (XPS). The change in the valence band energy per addition of 1 % Bi is determined for strained and unstrained thin films using a linear approximation applicable to the dilute regime. Spectroscopic ellipsometry (SE) was used as a complementary technique to determine the change in GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that similar to 75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature.

Links

692034, interní kód MU

Name: TWINFUSYON - Twinning for Improving Capacity of Research in Multifunctional Nanosystems for Optronic Biosensing (Acronym: TWINFUSYON)

Investor: European Union, Spreading excellence and widening participation

Citovat

COLLAR, K., J. LI, W. JIAO, Y. GUAN, M. LOSURDO, Josef HUMLÍČEK and A.S. BROWN. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy. AIP Advances. MELVILLE: AMER INST PHYSICS, 2017, vol. 7, No 7, p. nestránkováno, 6 pp. ISSN 2158-3226. Available from: https://dx.doi.org/10.1063/1.4986751.

@article{1411940,
   author = {Collar, K. and Li, J. and Jiao, W. and Guan, Y. and Losurdo, M. and Humlíček, Josef and Brown, A.S.},
   article_location = {MELVILLE},
   article_number = {7},
   doi = {http://dx.doi.org/10.1063/1.4986751},
   keywords = {MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; GAAS1-XBIX; INTERFACE; GROWTH; GAP},
   language = {eng},
   issn = {2158-3226},
   journal = {AIP Advances},
   title = {Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy},
   url = {https://aip.scitation.org/doi/10.1063/1.4986751},
   volume = {7},
   year = {2017}
}

TY  - JOUR
ID  - 1411940
AU  - Collar, K. - Li, J. - Jiao, W. - Guan, Y. - Losurdo, M. - Humlíček, Josef - Brown, A.S.
PY  - 2017
TI  - Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy
JF  - AIP Advances
VL  - 7
IS  - 7
SP  - nestránkováno
EP  - nestránkováno
PB  - AMER INST PHYSICS
SN  - 21583226
KW  - MOLECULAR-BEAM EPITAXY
KW  - TEMPERATURE-DEPENDENCE
KW  - GAAS1-XBIX
KW  - INTERFACE
KW  - GROWTH
KW  - GAP
UR  - https://aip.scitation.org/doi/10.1063/1.4986751
N2  - We investigate the change of the valence band energy of GaAs1-xBix as a function of dilute bismuth (Bi) concentration, x, using x-ray photoelectron spectroscopy (XPS). The change in the valence band energy per addition of 1 % Bi is determined for strained and unstrained thin films using a linear approximation applicable to the dilute regime. Spectroscopic ellipsometry (SE) was used as a complementary technique to determine the change in GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that similar to 75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature.
ER  -

COLLAR, K., J. LI, W. JIAO, Y. GUAN, M. LOSURDO, Josef HUMLÍČEK and A.S. BROWN. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy. \textit{AIP Advances}. MELVILLE: AMER INST PHYSICS, 2017, vol.~7, No~7, p.~nestránkováno, 6 pp. ISSN~2158-3226. Available from: https://dx.doi.org/10.1063/1.4986751.

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