Determining the sub-surface damage of CdTe single crystals
after lapping

J 2018

Determining the sub-surface damage of CdTe single crystals after lapping

ŠIK, Ondřej; L. ŠKVARENINA; Ondřej CAHA; P. M. BULLET; P. ŠKARVADA et. al.

Základní údaje

Originální název

Determining the sub-surface damage of CdTe single crystals after lapping

Název česky

Určení podpovrchového poškození CdTe krystalů po leštění

Autoři

ŠIK, Ondřej (203 Česká republika); L. ŠKVARENINA (203 Česká republika); Ondřej CAHA (203 Česká republika, garant, domácí); P. M. BULLET (203 Česká republika); P. ŠKARVADA (203 Česká republika); E.B. BULLET (203 Česká republika) a L. GRMELA (203 Česká republika)

Vydání

Journal of Materials Science: Materials in Electronics, Great Britain, Kluwer Academic Publishers, 2018, 0957-4522

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Impakt faktor

Impact factor: 2.195

Kód RIV

RIV/00216224:14310/18:00104787

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1007/s10854-018-9002-7

UT WoS

000432326800091

EID Scopus

2-s2.0-85044509886

Klíčová slova anglicky

GAMMA-RAY DETECTORS; QUANTUM DOTS; ETCH-PIT; CATHODOLUMINESCENCE MICROSCOPY; PHOTOCATALYTIC PERFORMANCE; SUNLIGHT IRRADIATION; CADMIUM TELLURIDE; CDZNTE CRYSTALS; CVD METHOD; GROWTH

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 13. 3. 2019 18:36, Mgr. Pavla Foltynová, Ph.D.

Anotace

V originále

We introduce an affordable and easy-to-implement method of determining the thickness of a mechanically damaged layer on the surface of a cadmium telluride single crystal after mechanical lapping. This method is based on This method is based on different usage of already known defect-revealing etchants: the side projection of the lapped surface. A comparison of developed etch pit patterns in the vicinity of the lapped side etched by the Everson solution, Nakagawa solution, Hahnert and Schenk solution, Saucedo solution, Inoue E-Ag II solution and FeCl3 is provided. The most commonly used defect-revealing etchants the Nakagawa and Everson solutions-did not show any trend of etch pit formation towards a mechanically damaged surface. On the other hand, the Saucedo, FeCl3 and E-Ag II etches were successful and achieved similar results. These etchants revealed three distinctive regions of sub-surface damage: (i) a severely polycrystalline 50 mu m deep damaged region with micro cracks. This region was best revealed by the FeCl3 etch. (ii) A region of plastic deformations that is 180 mu m deep. This region was best revealed by the E-Ag etch. (iii) A region free from mechanical damage. High-resolution X-ray diffraction (HRXRD) further confirmed the results obtained by chemical methods. Full-width at half maximum of the rocking curves decreased from the value of 1000 arcsec on the lapped surface to the value lower than 30 arcsec after the removal of 200 mu m of the surface. From HRXRD analysis, the region (i) can be further divided into an approx. 10 mu m thin nearly amorphous region, followed by a microcrystalline region. The region (ii) showed mosaic structure consisted of large crystallic blocks, with low angle misorientation from the main diffraction peak. The results showed that the thickness of the mechanically damaged layer is ten times higher than the size of the abrasive used.

Návaznosti

LM2015041, projekt VaV

Název: CEITEC Nano

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CEITEC Nano

LQ1601, projekt VaV

Název: CEITEC 2020 (Akronym: CEITEC2020)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CEITEC 2020

Citovat

ŠIK, Ondřej; L. ŠKVARENINA; Ondřej CAHA; P. M. BULLET; P. ŠKARVADA; E.B. BULLET a L. GRMELA. Determining the sub-surface damage of CdTe single crystals after lapping. Journal of Materials Science: Materials in Electronics. Great Britain: Kluwer Academic Publishers, 2018, roč. 29, č. 11, s. 9652-9662. ISSN 0957-4522. Dostupné z: https://dx.doi.org/10.1007/s10854-018-9002-7.

@article{1475016,
   author = {Šik, Ondřej and Škvarenina, L. and Caha, Ondřej and Bullet, P. M. and Škarvada, P. and Bullet, E.B. and Grmela, L.},
   article_location = {Great Britain},
   article_number = {11},
   doi = {http://dx.doi.org/10.1007/s10854-018-9002-7},
   keywords = {GAMMA-RAY DETECTORS; QUANTUM DOTS; ETCH-PIT; CATHODOLUMINESCENCE MICROSCOPY; PHOTOCATALYTIC PERFORMANCE; SUNLIGHT IRRADIATION; CADMIUM TELLURIDE; CDZNTE CRYSTALS; CVD METHOD; GROWTH},
   language = {eng},
   issn = {0957-4522},
   journal = {Journal of Materials Science: Materials in Electronics},
   title = {Determining the sub-surface damage of CdTe single crystals after lapping},
   volume = {29},
   year = {2018}
}

TY  - JOUR
ID  - 1475016
AU  - Šik, Ondřej - Škvarenina, L. - Caha, Ondřej - Bullet, P. M. - Škarvada, P. - Bullet, E.B. - Grmela, L.
PY  - 2018
TI  - Determining the sub-surface damage of CdTe single crystals after lapping
JF  - Journal of Materials Science: Materials in Electronics
VL  - 29
IS  - 11
SP  - 9652-9662
EP  - 9652-9662
PB  - Kluwer Academic Publishers
SN  - 09574522
KW  - GAMMA-RAY DETECTORS
KW  - QUANTUM DOTS
KW  - ETCH-PIT
KW  - CATHODOLUMINESCENCE MICROSCOPY
KW  - PHOTOCATALYTIC PERFORMANCE
KW  - SUNLIGHT IRRADIATION
KW  - CADMIUM TELLURIDE
KW  - CDZNTE CRYSTALS
KW  - CVD METHOD
KW  - GROWTH
N2  - We introduce an affordable and easy-to-implement method of determining the thickness of a mechanically damaged layer on the surface of a cadmium telluride single crystal after mechanical lapping. This method is based on This method is based on different usage of already known defect-revealing etchants: the side projection of the lapped surface. A comparison of developed etch pit patterns in the vicinity of the lapped side etched by the Everson solution, Nakagawa solution, Hahnert and Schenk solution, Saucedo solution, Inoue E-Ag II solution and FeCl3 is provided. The most commonly used defect-revealing etchants the Nakagawa and Everson solutions-did not show any trend of etch pit formation towards a mechanically damaged surface. On the other hand, the Saucedo, FeCl3 and E-Ag II etches were successful and achieved similar results. These etchants revealed three distinctive regions of sub-surface damage: (i) a severely polycrystalline 50 mu m deep damaged region with micro cracks. This region was best revealed by the FeCl3 etch. (ii) A region of plastic deformations that is 180 mu m deep. This region was best revealed by the E-Ag etch. (iii) A region free from mechanical damage. High-resolution X-ray diffraction (HRXRD) further confirmed the results obtained by chemical methods. Full-width at half maximum of the rocking curves decreased from the value of 1000 arcsec on the lapped surface to the value lower than 30 arcsec after the removal of 200 mu m of the surface. From HRXRD analysis, the region (i) can be further divided into an approx. 10 mu m thin nearly amorphous region, followed by a microcrystalline region. The region (ii) showed mosaic structure consisted of large crystallic blocks, with low angle misorientation from the main diffraction peak. The results showed that the thickness of the mechanically damaged layer is ten times higher than the size of the abrasive used.
ER  -

ŠIK, Ondřej; L. ŠKVARENINA; Ondřej CAHA; P. M. BULLET; P. ŠKARVADA; E.B. BULLET a L. GRMELA. Determining the sub-surface damage of CdTe single crystals after lapping. \textit{Journal of Materials Science: Materials in Electronics}. Great Britain: Kluwer Academic Publishers, 2018, roč.~29, č.~11, s.~9652-9662. ISSN~0957-4522. Dostupné z: https://dx.doi.org/10.1007/s10854-018-9002-7.

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