| MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA a Hans VON KÄNEL. Growth temperature dependent strain in relaxed Ge microcrystals. Thin Solid Films. Elsevier, 2018, roč. 664, OCT, s. 115-123. ISSN 0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2018.08.033. |
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@article{1484965,
author = {Meduňa, Mojmír and Falub, Claudiu Valentin and Isa, Fabio and von Känel, Hans},
article_number = {OCT},
doi = {http://dx.doi.org/10.1016/j.tsf.2018.08.033},
keywords = {Patterned substrates; Silicon substrates; Germanium; Nanocrystals; X-ray diffraction; Crystal Defects; Low energy plasma enhanced chemical vapor deposition},
language = {eng},
issn = {0040-6090},
journal = {Thin Solid Films},
title = {Growth temperature dependent strain in relaxed Ge microcrystals},
volume = {664},
year = {2018}
}
TY - JOUR
ID - 1484965
AU - Meduňa, Mojmír - Falub, Claudiu Valentin - Isa, Fabio - von Känel, Hans
PY - 2018
TI - Growth temperature dependent strain in relaxed Ge microcrystals
JF - Thin Solid Films
VL - 664
IS - OCT
SP - 115-123
EP - 115-123
PB - Elsevier
SN - 00406090
KW - Patterned substrates
KW - Silicon substrates
KW - Germanium
KW - Nanocrystals
KW - X-ray diffraction
KW - Crystal Defects
KW - Low energy plasma enhanced chemical vapor deposition
N2 - Using high resolution X-ray diffraction with reciprocal space mapping, we obtain the lattice parameters, strain and degree of relaxation at different growth temperatures of microcrystals.
ER -
MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA a Hans VON KÄNEL. Growth temperature dependent strain in relaxed Ge microcrystals. \textit{Thin Solid Films}. Elsevier, 2018, roč.~664, OCT, s.~115-123. ISSN~0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2018.08.033.
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