2019
X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers
MEDUŇA, Mojmír; Thomas KREILIGER; Marco MAUCERI; Marco PUGLISI; Fulvio MANCARELLA et. al.Basic information
Original name
X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers
Name in Czech
Rtg difrakce na vrstevných chybách v 3C-SiC epitaxních mikrokrystalech rostlých na vzorkovaných Si(001) deskách
Authors
MEDUŇA, Mojmír (203 Czech Republic, guarantor, belonging to the institution); Thomas KREILIGER (756 Switzerland); Marco MAUCERI (380 Italy); Marco PUGLISI (380 Italy); Fulvio MANCARELLA (380 Italy); Francesco LA VIA (380 Italy); Danilo CRIPPA (380 Italy); Leo MIGLIO (380 Italy) and Hans VON KÄNEL (756 Switzerland)
Edition
Journal of Crystal Growth, Amsterdam, Elsevier, 2019, 0022-0248
Other information
Language
English
Type of outcome
Article in a journal
Field of Study
10302 Condensed matter physics
Country of publisher
Netherlands
Confidentiality degree
is not subject to a state or trade secret
References:
Impact factor
Impact factor: 1.632
RIV identification code
RIV/00216224:14310/19:00108995
Organization unit
Faculty of Science
UT WoS
000455667500011
EID Scopus
2-s2.0-85056217589
Keywords in English
Semiconducting silicon compounds; Carbides; High resolution X-ray diffraction; Planar defects; Low dimensional structures
Tags
Tags
International impact, Reviewed
Changed: 13/3/2020 10:58, Mgr. Marie Novosadová Šípková, DiS.
In the original language
We present an investigation of the structural quality of arrays of 3C-SiC micropillars and microridges grown epitaxially on deeply etched Si(0 0 1) substrates offcut towards [1 1 0].
In Czech
Představujeme zkoumání strukturální kvality polí 3C-SiC mikropilířů a mikrodrátů pěstovaných epitaxně na hluboce leptaných substrátech Si (0 0 1) odříznutých vzhledem k [1 1 0].
Links
LM2015041, research and development project |
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LQ1601, research and development project |
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