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@article{1506636,
author = {Gablech, I. and Svatos, V. and Caha, Ondřej and Dubroka, Adam and Pekarek, J. and Klempa, J. and Neuzil, P. and Schneider, M. and Šikola, Tomáš},
article_location = {LAUSANNE},
article_number = {December},
doi = {http://dx.doi.org/10.1016/j.tsf.2018.12.035},
keywords = {Ion-beam sputtering deposition; Kaufman ion-beam source; Aluminum nitride thin film; (001) preferential orientation; X-ray diffraction; Optical properties; Ellipsometry; d(33) piezoelectric coefficient},
language = {eng},
issn = {0040-6090},
journal = {Thin Solid Films},
title = {Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup},
url = {http://dx.doi.org/10.1016/j.tsf.2018.12.035},
volume = {670},
year = {2019}
}
TY - JOUR
ID - 1506636
AU - Gablech, I. - Svatos, V. - Caha, Ondřej - Dubroka, Adam - Pekarek, J. - Klempa, J. - Neuzil, P. - Schneider, M. - Šikola, Tomáš
PY - 2019
TI - Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup
JF - Thin Solid Films
VL - 670
IS - December
SP - 105-112
EP - 105-112
PB - ELSEVIER SCIENCE SA
SN - 00406090
KW - Ion-beam sputtering deposition
KW - Kaufman ion-beam source
KW - Aluminum nitride thin film
KW - (001) preferential orientation
KW - X-ray diffraction
KW - Optical properties
KW - Ellipsometry
KW - d(33) piezoelectric coefficient
UR - http://dx.doi.org/10.1016/j.tsf.2018.12.035
L2 - http://dx.doi.org/10.1016/j.tsf.2018.12.035
N2 - We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 degrees C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d(33) = (7.33 +/- 0.08) pC.N-1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.
ER -
GABLECH, I., V. SVATOS, Ondřej CAHA, Adam DUBROKA, J. PEKAREK, J. KLEMPA, P. NEUZIL, M. SCHNEIDER a Tomáš ŠIKOLA. Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup. \textit{Thin Solid Films}. LAUSANNE: ELSEVIER SCIENCE SA, 2019, roč.~670, December, s.~105-112. ISSN~0040-6090. Dostupné z: https://dx.doi.org/10.1016/j.tsf.2018.12.035.
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