Optical Characterization of Non-Stoichiometric Silicon Nitride
Films Exhibiting Combined Defects

J 2019

Optical Characterization of Non-Stoichiometric Silicon Nitride Films Exhibiting Combined Defects

VOHÁNKA, Jiří, Ivan OHLÍDAL, Miloslav OHLÍDAL, Štěpán ŠUSTEK, Martin ČERMÁK et. al.

Základní údaje

Originální název

Optical Characterization of Non-Stoichiometric Silicon Nitride Films Exhibiting Combined Defects

Autoři

VOHÁNKA, Jiří (203 Česká republika, garant, domácí), Ivan OHLÍDAL (203 Česká republika, domácí), Miloslav OHLÍDAL (203 Česká republika), Štěpán ŠUSTEK (203 Česká republika), Martin ČERMÁK (203 Česká republika, domácí), Václav ŠULC (203 Česká republika), Petr VAŠINA (203 Česká republika, domácí), Jaroslav ŽENÍŠEK (203 Česká republika, domácí) a Daniel FRANTA (203 Česká republika, domácí)

Vydání

Coatings, Basel, MDPI, 2019, 2079-6412

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10306 Optics

Stát vydavatele

Švýcarsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

Full Text

Impakt faktor

Impact factor: 2.436

Kód RIV

RIV/00216224:14310/19:00110403

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.3390/coatings9070416

UT WoS

000478656200044

Klíčová slova anglicky

silicon nitride;optical characterization;ellipsometry;inhomogeneous films;optical anisotropy

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 24. 3. 2020 10:12, Mgr. Marie Šípková, DiS.

Anotace

V originále

The study was devoted to optical characterization of non-stoichiometric silicon nitride films prepared by reactive magnetron sputtering in argon-nitrogen atmosphere onto cold (unheated) substrates. It was found that these films exhibit the combination of three defects: optical inhomogeneity (refractive index profile across the films), uniaxial anisotropy with the optical axis perpendicular to the boundaries and random roughness of the upper boundaries. The influence of the uniaxial anisotropy was included into the corresponding formulae of the optical quantities using the matrix formalism and the approximation of the inhomogeneous layer by a multilayer system consisting of large number thin homogeneous layers. The random roughness was described using the scalar diffraction theory. The processing of the experimental data was performed using the multi-sample modification of the least-squares method, in which experimental data of several samples differing in thickness were processed simultaneously. The dielectric response of the silicon nitride films was modeled using the modification of the universal dispersion model, which takes into account absorption processes corresponding to valence-to-conduction band electron transitions, excitonic effects and Urbach tail. The spectroscopic reflectometric and ellipsometric measurements were supplemented by measuring the uniformity of the samples using imaging spectroscopic reflectometry.

Návaznosti

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

VOHÁNKA, Jiří, Ivan OHLÍDAL, Miloslav OHLÍDAL, Štěpán ŠUSTEK, Martin ČERMÁK, Václav ŠULC, Petr VAŠINA, Jaroslav ŽENÍŠEK a Daniel FRANTA. Optical Characterization of Non-Stoichiometric Silicon Nitride Films Exhibiting Combined Defects. Coatings. Basel: MDPI, 2019, roč. 9, č. 7, s. 1-21. ISSN 2079-6412. Dostupné z: https://dx.doi.org/10.3390/coatings9070416.

@article{1549343,
   author = {Vohánka, Jiří and Ohlídal, Ivan and Ohlídal, Miloslav and Šustek, Štěpán and Čermák, Martin and Šulc, Václav and Vašina, Petr and Ženíšek, Jaroslav and Franta, Daniel},
   article_location = {Basel},
   article_number = {7},
   doi = {http://dx.doi.org/10.3390/coatings9070416},
   keywords = {silicon nitride;optical characterization;ellipsometry;inhomogeneous films;optical anisotropy},
   language = {eng},
   issn = {2079-6412},
   journal = {Coatings},
   title = {Optical Characterization of Non-Stoichiometric Silicon Nitride Films Exhibiting Combined Defects},
   url = {https://doi.org/10.3390/coatings9070416},
   volume = {9},
   year = {2019}
}

TY  - JOUR
ID  - 1549343
AU  - Vohánka, Jiří - Ohlídal, Ivan - Ohlídal, Miloslav - Šustek, Štěpán - Čermák, Martin - Šulc, Václav - Vašina, Petr - Ženíšek, Jaroslav - Franta, Daniel
PY  - 2019
TI  - Optical Characterization of Non-Stoichiometric Silicon Nitride Films Exhibiting Combined Defects
JF  - Coatings
VL  - 9
IS  - 7
SP  - 1-21
EP  - 1-21
PB  - MDPI
SN  - 20796412
KW  - silicon nitride;optical characterization;ellipsometry;inhomogeneous films;optical anisotropy
UR  - https://doi.org/10.3390/coatings9070416
L2  - https://doi.org/10.3390/coatings9070416
N2  - The study was devoted to optical characterization of non-stoichiometric silicon nitride films prepared by reactive magnetron sputtering in argon-nitrogen atmosphere onto cold (unheated) substrates. It was found that these films exhibit the combination of three defects: optical inhomogeneity (refractive index profile across the films), uniaxial anisotropy with the optical axis perpendicular to the boundaries and random roughness of the upper boundaries. The influence of the uniaxial anisotropy was included into the corresponding formulae of the optical quantities using the matrix formalism and the approximation of the inhomogeneous layer by a multilayer system consisting of large number thin homogeneous layers. The random roughness was described using the scalar diffraction theory. The processing of the experimental data was performed using the multi-sample modification of the least-squares method, in which experimental data of several samples differing in thickness were processed simultaneously. The dielectric response of the silicon nitride films was modeled using the modification of the universal dispersion model, which takes into account absorption processes corresponding to valence-to-conduction band electron transitions, excitonic effects and Urbach tail. The spectroscopic reflectometric and ellipsometric measurements were supplemented by measuring the uniformity of the samples using imaging spectroscopic reflectometry.
ER  -

VOHÁNKA, Jiří, Ivan OHLÍDAL, Miloslav OHLÍDAL, Štěpán ŠUSTEK, Martin ČERMÁK, Václav ŠULC, Petr VAŠINA, Jaroslav ŽENÍŠEK a Daniel FRANTA. Optical Characterization of Non-Stoichiometric Silicon Nitride Films Exhibiting Combined Defects. \textit{Coatings}. Basel: MDPI, 2019, roč.~9, č.~7, s.~1-21. ISSN~2079-6412. Dostupné z: https://dx.doi.org/10.3390/coatings9070416.

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