Approximate methods for the optical characterization of
inhomogeneous thin films: Applications to silicon nitride films

J 2019

Approximate methods for the optical characterization of inhomogeneous thin films: Applications to silicon nitride films

OHLÍDAL, Ivan, Jiří VOHÁNKA, Daniel FRANTA, Martin ČERMÁK, Jaroslav ŽENÍŠEK et. al.

Základní údaje

Originální název

Approximate methods for the optical characterization of inhomogeneous thin films: Applications to silicon nitride films

Autoři

OHLÍDAL, Ivan (203 Česká republika, garant, domácí), Jiří VOHÁNKA (203 Česká republika, domácí), Daniel FRANTA (203 Česká republika, domácí), Martin ČERMÁK (203 Česká republika, domácí), Jaroslav ŽENÍŠEK (203 Česká republika, domácí) a Petr VAŠINA (203 Česká republika, domácí)

Vydání

Journal of Electrical Engineering, Slovenská technická univezita v Bratislavě, 2019, 1335-3632

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10306 Optics

Stát vydavatele

Slovensko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 0.686

Kód RIV

RIV/00216224:14310/19:00111214

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.2478/jee-2019-0037

UT WoS

000489301300002

Klíčová slova anglicky

ellipsometric parameters;inhomogeneous thin films;optical characterization;reflectance

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 26. 3. 2020 13:12, Mgr. Marie Šípková, DiS.

Anotace

V originále

In this paper the overview of the most important approximate methods for the optical characterization of inhomogeneous thin films is presented. The following approximate methods are introduced: Wentzel-Kramers-Brillouin-Jeffreys approximation, method based on substituting inhomogeneous thin films by multilayer systems, method based on modifying recursive approach and method utilizing multiple-beam interference model. Principles and mathematical formulations of these methods are described. A comparison of these methods is carried out from the practical point of view, ie advantages and disadvantages of individual methods are discussed. Examples of the optical characterization of three inhomogeneous thin films consisting of non-stoichiometric silicon nitride are introduced in order to illustrate efficiency and practical meaning of the presented approximate methods.

Návaznosti

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

OHLÍDAL, Ivan, Jiří VOHÁNKA, Daniel FRANTA, Martin ČERMÁK, Jaroslav ŽENÍŠEK a Petr VAŠINA. Approximate methods for the optical characterization of inhomogeneous thin films: Applications to silicon nitride films. Journal of Electrical Engineering. Slovenská technická univezita v Bratislavě, 2019, roč. 70, č. 7, s. 16-26. ISSN 1335-3632. Dostupné z: https://dx.doi.org/10.2478/jee-2019-0037.

@article{1577436,
   author = {Ohlídal, Ivan and Vohánka, Jiří and Franta, Daniel and Čermák, Martin and Ženíšek, Jaroslav and Vašina, Petr},
   article_number = {7},
   doi = {http://dx.doi.org/10.2478/jee-2019-0037},
   keywords = {ellipsometric parameters;inhomogeneous thin films;optical characterization;reflectance},
   language = {eng},
   issn = {1335-3632},
   journal = {Journal of Electrical Engineering},
   title = {Approximate methods for the optical characterization of inhomogeneous thin films: Applications to silicon nitride films},
   url = {https://doi.org/10.2478/jee-2019-0037},
   volume = {70},
   year = {2019}
}

TY  - JOUR
ID  - 1577436
AU  - Ohlídal, Ivan - Vohánka, Jiří - Franta, Daniel - Čermák, Martin - Ženíšek, Jaroslav - Vašina, Petr
PY  - 2019
TI  - Approximate methods for the optical characterization of inhomogeneous thin films: Applications to silicon nitride films
JF  - Journal of Electrical Engineering
VL  - 70
IS  - 7
SP  - 16-26
EP  - 16-26
PB  - Slovenská technická univezita v Bratislavě
SN  - 13353632
KW  - ellipsometric parameters;inhomogeneous thin films;optical characterization;reflectance
UR  - https://doi.org/10.2478/jee-2019-0037
L2  - https://doi.org/10.2478/jee-2019-0037
N2  - In this paper the overview of the most important approximate methods for the optical characterization of inhomogeneous thin films is presented. The following approximate methods are introduced: Wentzel-Kramers-Brillouin-Jeffreys approximation, method based on substituting inhomogeneous thin films by multilayer systems, method based on modifying recursive approach and method utilizing multiple-beam interference model. Principles and mathematical formulations of these methods are described. A comparison of these methods is carried out from the practical point of view, ie advantages and disadvantages of individual methods are discussed. Examples of the optical characterization of three inhomogeneous thin films consisting of non-stoichiometric silicon nitride are introduced in order to illustrate efficiency and practical meaning of the presented approximate methods.
ER  -

OHLÍDAL, Ivan, Jiří VOHÁNKA, Daniel FRANTA, Martin ČERMÁK, Jaroslav ŽENÍŠEK a Petr VAŠINA. Approximate methods for the optical characterization of inhomogeneous thin films: Applications to silicon nitride films. \textit{Journal of Electrical Engineering}. Slovenská technická univezita v Bratislavě, 2019, roč.~70, č.~7, s.~16-26. ISSN~1335-3632. Dostupné z: https://dx.doi.org/10.2478/jee-2019-0037.

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