Optical properties of the crystalline silicon wafers described
using the universal dispersion model

J 2019

Optical properties of the crystalline silicon wafers described using the universal dispersion model

FRANTA, Daniel, Jiří VOHÁNKA, Martin BRÁNECKÝ, Pavel FRANTA, Martin ČERMÁK et. al.

Základní údaje

Originální název

Optical properties of the crystalline silicon wafers described using the universal dispersion model

Autoři

FRANTA, Daniel (203 Česká republika, domácí), Jiří VOHÁNKA (203 Česká republika, domácí), Martin BRÁNECKÝ (203 Česká republika), Pavel FRANTA (203 Česká republika, domácí), Martin ČERMÁK (203 Česká republika, domácí), Ivan OHLÍDAL (203 Česká republika, domácí) a Vladimír ČECH (203 Česká republika)

Vydání

Journal of Vacuum Science & Technology B, New York, A V S AMER INST PHYSICS, 2019, 2166-2746

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10306 Optics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.511

Kód RIV

RIV/00216224:14310/19:00112018

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1116/1.5122284

UT WoS

000522021700058

Klíčová slova anglicky

Spectrophotometry;Gaussian broadening;Optical constants;Optical properties;Phonons;Dielectric properties

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 17. 4. 2020 17:21, Mgr. Marie Šípková, DiS.

Anotace

V originále

The optical properties of a slightly boron doped float-zone crystalline silicon wafer are studied using ellipsometry and spectrophotometry in a wide spectral range from far IR to vacuum UV. One side of the wafer was cleaned in an argon plasma, which influenced the optical properties of silicon near the surface. The dielectric response of silicon was modeled using a simplified universal dispersion model which is constructed on the basis of parameterization of the joint density of states describing both the electronic and phonon excitations. Several variants of models describing phonon absorption and interband transitions are discussed. It was possible to accurately determine the optical constants of bulk silicon and the optical constants near the perturbed surface over a wide spectral range. These optical constants agree well with those found in other works. From the optical measurements, it was also possible to determine the thickness of the wafer and the static value of resistivity, and the determined values agreed with nominal values specified for the wafer.

Návaznosti

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

FRANTA, Daniel, Jiří VOHÁNKA, Martin BRÁNECKÝ, Pavel FRANTA, Martin ČERMÁK, Ivan OHLÍDAL a Vladimír ČECH. Optical properties of the crystalline silicon wafers described using the universal dispersion model. Journal of Vacuum Science & Technology B. New York: A V S AMER INST PHYSICS, 2019, roč. 37, č. 6, s. "062907-1"-"062907-14", 14 s. ISSN 2166-2746. Dostupné z: https://dx.doi.org/10.1116/1.5122284.

@article{1598876,
   author = {Franta, Daniel and Vohánka, Jiří and Bránecký, Martin and Franta, Pavel and Čermák, Martin and Ohlídal, Ivan and Čech, Vladimír},
   article_location = {New York},
   article_number = {6},
   doi = {http://dx.doi.org/10.1116/1.5122284},
   keywords = {Spectrophotometry;Gaussian broadening;Optical constants;Optical properties;Phonons;Dielectric properties},
   language = {eng},
   issn = {2166-2746},
   journal = {Journal of Vacuum Science & Technology B},
   title = {Optical properties of the crystalline silicon wafers described using the universal dispersion model},
   url = {https://doi.org/10.1116/1.5122284},
   volume = {37},
   year = {2019}
}

TY  - JOUR
ID  - 1598876
AU  - Franta, Daniel - Vohánka, Jiří - Bránecký, Martin - Franta, Pavel - Čermák, Martin - Ohlídal, Ivan - Čech, Vladimír
PY  - 2019
TI  - Optical properties of the crystalline silicon wafers described using the universal dispersion model
JF  - Journal of Vacuum Science & Technology B
VL  - 37
IS  - 6
SP  - "062907-1"-"062907-14"
EP  - "062907-1"-"062907-14"
PB  - A V S AMER INST PHYSICS
SN  - 21662746
KW  - Spectrophotometry;Gaussian broadening;Optical constants;Optical properties;Phonons;Dielectric properties
UR  - https://doi.org/10.1116/1.5122284
L2  - https://doi.org/10.1116/1.5122284
N2  - The optical properties of a slightly boron doped float-zone crystalline silicon wafer are studied using ellipsometry and spectrophotometry in a wide spectral range from far IR to vacuum UV. One side of the wafer was cleaned in an argon plasma, which influenced the optical properties of silicon near the surface. The dielectric response of silicon was modeled using a simplified universal dispersion model which is constructed on the basis of parameterization of the joint density of states describing both the electronic and phonon excitations. Several variants of models describing phonon absorption and interband transitions are discussed. It was possible to accurately determine the optical constants of bulk silicon and the optical constants near the perturbed surface over a wide spectral range. These optical constants agree well with those found in other works. From the optical measurements, it was also possible to determine the thickness of the wafer and the static value of resistivity, and the determined values agreed with nominal values specified for the wafer.
ER  -

FRANTA, Daniel, Jiří VOHÁNKA, Martin BRÁNECKÝ, Pavel FRANTA, Martin ČERMÁK, Ivan OHLÍDAL a Vladimír ČECH. Optical properties of the crystalline silicon wafers described using the universal dispersion model. \textit{Journal of Vacuum Science \&{} Technology B}. New York: A V S AMER INST PHYSICS, 2019, roč.~37, č.~6, s.~''062907-1''-''062907-14'', 14 s. ISSN~2166-2746. Dostupné z: https://dx.doi.org/10.1116/1.5122284.

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