| ISA, Fabio, Arik JUNG, Marco SALVALAGLIO, Yadira Arroyo Rojas DASILVA, Mojmír MEDUŇA, Michael BARGET, Thomas KREILIGER, Giovanni ISELLA, Rolf ERNI, Fabio PEZZOLI, Emiliano BONERA, Philippe NIEDERMANN, Kai ZWEIACKER, Antonia NEELS, Alex DOMMANN, Pierangelo GRONING, Francesco MONTALENTI a Hans VON KANEL. Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals. MRS ADVANCES. New York: CAMBRIDGE UNIV PRESS, 2016, roč. 1, č. 50, s. 3403-3408. ISSN 2059-8521. Dostupné z: https://dx.doi.org/10.1557/adv.2016.355. |
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@article{1629213,
author = {Isa, Fabio and Jung, Arik and Salvalaglio, Marco and Dasilva, Yadira Arroyo Rojas and Meduňa, Mojmír and Barget, Michael and Kreiliger, Thomas and Isella, Giovanni and Erni, Rolf and Pezzoli, Fabio and Bonera, Emiliano and Niedermann, Philippe and Zweiacker, Kai and Neels, Antonia and Dommann, Alex and Groning, Pierangelo and Montalenti, Francesco and von Kanel, Hans},
article_location = {New York},
article_number = {50},
doi = {http://dx.doi.org/10.1557/adv.2016.355},
keywords = {layers; heteroepitaxy; GaN},
language = {eng},
issn = {2059-8521},
journal = {MRS ADVANCES},
title = {Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals},
url = {https://www.cambridge.org/core/journals/mrs-advances/article/elastic-and-plastic-stress-relaxation-in-highly-mismatched-sigesi-crystals/E6FE1EC0597E73264DF061B98BC15069},
volume = {1},
year = {2016}
}
TY - JOUR
ID - 1629213
AU - Isa, Fabio - Jung, Arik - Salvalaglio, Marco - Dasilva, Yadira Arroyo Rojas - Meduňa, Mojmír - Barget, Michael - Kreiliger, Thomas - Isella, Giovanni - Erni, Rolf - Pezzoli, Fabio - Bonera, Emiliano - Niedermann, Philippe - Zweiacker, Kai - Neels, Antonia - Dommann, Alex - Groning, Pierangelo - Montalenti, Francesco - von Kanel, Hans
PY - 2016
TI - Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals
JF - MRS ADVANCES
VL - 1
IS - 50
SP - 3403-3408
EP - 3403-3408
PB - CAMBRIDGE UNIV PRESS
SN - 20598521
KW - layers
KW - heteroepitaxy
KW - GaN
UR - https://www.cambridge.org/core/journals/mrs-advances/article/elastic-and-plastic-stress-relaxation-in-highly-mismatched-sigesi-crystals/E6FE1EC0597E73264DF061B98BC15069
L2 - https://www.cambridge.org/core/journals/mrs-advances/article/elastic-and-plastic-stress-relaxation-in-highly-mismatched-sigesi-crystals/E6FE1EC0597E73264DF061B98BC15069
N2 - We present a new concept applicable to the epitaxial growth of dislocation-free semiconductor structures on a mismatched substrate with a thickness far exceeding the conventional critical thickness for plastic strain relaxation. This innovative concept is based on the out-of-equilibrium growth of compositionally graded alloys on deeply patterned substrates. We obtain space-filling arrays of individual crystals several micrometers wide in which the mechanism of strain relaxation is fundamentally changed from plastic to elastic. The complete absence of dislocations at and near the heterointerface may pave the way to realize CMOS integrated SiGe X-ray detectors.
ER -
ISA, Fabio, Arik JUNG, Marco SALVALAGLIO, Yadira Arroyo Rojas DASILVA, Mojmír MEDUŇA, Michael BARGET, Thomas KREILIGER, Giovanni ISELLA, Rolf ERNI, Fabio PEZZOLI, Emiliano BONERA, Philippe NIEDERMANN, Kai ZWEIACKER, Antonia NEELS, Alex DOMMANN, Pierangelo GRONING, Francesco MONTALENTI a Hans VON KANEL. Elastic and Plastic Stress Relaxation in Highly Mismatched SiGe/Si Crystals. \textit{MRS ADVANCES}. New York: CAMBRIDGE UNIV PRESS, 2016, roč.~1, č.~50, s.~3403-3408. ISSN~2059-8521. Dostupné z: https://dx.doi.org/10.1557/adv.2016.355.
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