Atomic Layer Deposition of MoSe2 Using New Selenium Precursors

J 2020

Atomic Layer Deposition of MoSe2 Using New Selenium Precursors

ZAZPE, Raul, Jan CHARVOT, Richard KRUMPOLEC, Ludek HROMADKO, David PAVLIŇÁK et. al.

Základní údaje

Originální název

Atomic Layer Deposition of MoSe2 Using New Selenium Precursors

Autoři

ZAZPE, Raul, Jan CHARVOT, Richard KRUMPOLEC (703 Slovensko, domácí), Ludek HROMADKO, David PAVLIŇÁK (203 Česká republika, domácí), Filip DVORAK, Petr KNOTEK, Jan MICHALICKA, Jan PŘIKRYL, Siowwoon NG, Veronika JELÍNKOVÁ, Filip BUREŠ a Jan M. MACÁK (garant)

Vydání

FlatChem, Amsterdam, Elsevier, 2020, 2452-2627

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

21001 Nano-materials

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

doi link to website

Impakt faktor

Impact factor: 5.227

Kód RIV

RIV/00216224:14310/20:00115534

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1016/j.flatc.2020.100166

UT WoS

000540780300005

Klíčová slova anglicky

2D materials; Atomic layer deposition; Chalcogens; Layered compounds; Synthesis design

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 5. 11. 2020 18:08, Mgr. Marie Šípková, DiS.

Anotace

V originále

Among the emerging 2D materials, transition metal chalcogenides are particularly encouraging as alternative semiconducting graphene-like nanomaterial. Recently, 2D MoSe2 has been gaining interest due to its intriguing properties, in many ways exceeding those of the extensively studied MoS2. The deposition of 2D nanomaterials in a conformal and uniform fashion on complex-shaped nanostructures is highly appealing but only achievable by atomic layer deposition (ALD). Unfortunately, the synthesis of MoSe2 by ALD is hindered by a current substantial lack of feasible Se precursors. In this work, we synthesized a set of alkysilyl (R3Si)2Se and alkylstannyl (R3Sn)2Se compounds and studied their suitability as Se ALD precursors. Thus, ALD processes carried out using MoCl5 as Mo precursor counterpart were followed by an extensive characterization of the as deposited material. The corresponding results revealed successful deposition of MoSe2 nanostructures on substrates of different nature with dominant out-of-plane orientation. Eventually, the growth evolution of the MoSe2 during the very early ALD stage was studied and described, displaying concomitant in-plane and out-of-plane MoSe2 growth. All in all, a set of Se suitable precursors presented herein paves the way for the deposition of 2D MoSe2 with all the own ALD benefits and allow the further study of its promising properties in a wide number of applications.

Návaznosti

LO1411, projekt VaV

Název: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy (Akronym: CEPLANT plus)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

LQ1601, projekt VaV

Název: CEITEC 2020 (Akronym: CEITEC2020)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, CEITEC 2020

Citovat

ZAZPE, Raul, Jan CHARVOT, Richard KRUMPOLEC, Ludek HROMADKO, David PAVLIŇÁK, Filip DVORAK, Petr KNOTEK, Jan MICHALICKA, Jan PŘIKRYL, Siowwoon NG, Veronika JELÍNKOVÁ, Filip BUREŠ a Jan M. MACÁK. Atomic Layer Deposition of MoSe2 Using New Selenium Precursors. FlatChem. Amsterdam: Elsevier, 2020, roč. 21, MAY 2020, s. 1-10. ISSN 2452-2627. Dostupné z: https://dx.doi.org/10.1016/j.flatc.2020.100166.

@article{1645937,
   author = {Zazpe, Raul and Charvot, Jan and Krumpolec, Richard and Hromadko, Ludek and Pavliňák, David and Dvorak, Filip and Knotek, Petr and Michalicka, Jan and Přikryl, Jan and Ng, Siowwoon and Jelínková, Veronika and Bureš, Filip and Macák, Jan M.},
   article_location = {Amsterdam},
   article_number = {MAY 2020},
   doi = {http://dx.doi.org/10.1016/j.flatc.2020.100166},
   keywords = {2D materials; Atomic layer deposition; Chalcogens; Layered compounds; Synthesis design},
   language = {eng},
   issn = {2452-2627},
   journal = {FlatChem},
   title = {Atomic Layer Deposition of MoSe2 Using New Selenium Precursors},
   url = {https://doi.org/10.1016/j.flatc.2020.100166},
   volume = {21},
   year = {2020}
}

TY  - JOUR
ID  - 1645937
AU  - Zazpe, Raul - Charvot, Jan - Krumpolec, Richard - Hromadko, Ludek - Pavliňák, David - Dvorak, Filip - Knotek, Petr - Michalicka, Jan - Přikryl, Jan - Ng, Siowwoon - Jelínková, Veronika - Bureš, Filip - Macák, Jan M.
PY  - 2020
TI  - Atomic Layer Deposition of MoSe2 Using New Selenium Precursors
JF  - FlatChem
VL  - 21
IS  - MAY 2020
SP  - 1-10
EP  - 1-10
PB  - Elsevier
SN  - 24522627
KW  - 2D materials
KW  - Atomic layer deposition
KW  - Chalcogens
KW  - Layered compounds
KW  - Synthesis design
UR  - https://doi.org/10.1016/j.flatc.2020.100166
L2  - https://doi.org/10.1016/j.flatc.2020.100166
N2  - Among the emerging 2D materials, transition metal chalcogenides are particularly encouraging as alternative semiconducting graphene-like nanomaterial. Recently, 2D MoSe2 has been gaining interest due to its intriguing properties, in many ways exceeding those of the extensively studied MoS2. The deposition of 2D nanomaterials in a conformal and uniform fashion on complex-shaped nanostructures is highly appealing but only achievable by atomic layer deposition (ALD). Unfortunately, the synthesis of MoSe2 by ALD is hindered by a current substantial lack of feasible Se precursors. In this work, we synthesized a set of alkysilyl (R3Si)2Se and alkylstannyl (R3Sn)2Se compounds and studied their suitability as Se ALD precursors. Thus, ALD processes carried out using MoCl5 as Mo precursor counterpart were followed by an extensive characterization of the as deposited material. The corresponding results revealed successful deposition of MoSe2 nanostructures on substrates of different nature with dominant out-of-plane orientation. Eventually, the growth evolution of the MoSe2 during the very early ALD stage was studied and described, displaying concomitant in-plane and out-of-plane MoSe2 growth. All in all, a set of Se suitable precursors presented herein paves the way for the deposition of 2D MoSe2 with all the own ALD benefits and allow the further study of its promising properties in a wide number of applications.
ER  -

ZAZPE, Raul, Jan CHARVOT, Richard KRUMPOLEC, Ludek HROMADKO, David PAVLIŇÁK, Filip DVORAK, Petr KNOTEK, Jan MICHALICKA, Jan PŘIKRYL, Siowwoon NG, Veronika JELÍNKOVÁ, Filip BUREŠ a Jan M. MACÁK. Atomic Layer Deposition of MoSe2 Using New Selenium Precursors. \textit{FlatChem}. Amsterdam: Elsevier, 2020, roč.~21, MAY 2020, s.~1-10. ISSN~2452-2627. Dostupné z: https://dx.doi.org/10.1016/j.flatc.2020.100166.

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