MOVPE GaN/AlGaN HEMT NANO-STRUCTURES

D 2019

MOVPE GaN/AlGaN HEMT NANO-STRUCTURES

HULICIUS, E.; K. KULDOVA; A. HOSPODKOVA; J. PANGRAC; F. DOMINEC et. al.

Základní údaje

Originální název

MOVPE GaN/AlGaN HEMT NANO-STRUCTURES

Autoři

HULICIUS, E.; K. KULDOVA; A. HOSPODKOVA; J. PANGRAC; F. DOMINEC; Josef HUMLÍČEK (203 Česká republika, garant, domácí); I. PELANT; O. CIBULKA a K. HERYNKOVA

Vydání

SLEZSKA, 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2018 (R)), od s. 30-35, 6 s. 2019

Nakladatel

TANGER LTD

Další údaje

Jazyk

angličtina

Typ výsledku

Stať ve sborníku

Obor

10300 1.3 Physical sciences

Stát vydavatele

Česká republika

Utajení

není předmětem státního či obchodního tajemství

Forma vydání

elektronická verze "online"

Odkazy

URL

Kód RIV

RIV/00216224:14740/19:00108444

Organizační jednotka

Středoevropský technologický institut

ISBN

978-80-87294-89-5

UT WoS

000513131900004

EID Scopus

2-s2.0-85063000843

Klíčová slova anglicky

HEMT; MOVPE; nitrides; quantum well

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 24. 4. 2020 11:16, Mgr. Pavla Foltynová, Ph.D.

Anotace

V originále

GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications. HEMT structures described and discussed here were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished 6" Si substrates. Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and mu-Raman spectroscopy.

Návaznosti

TH02010014, projekt VaV

Název: Nové polovodičové struktury pro pokročilé elektronické aplikace

Investor: Technologická agentura ČR, Nové polovodičové struktury pro pokročilé elektronické aplikace

Citovat

HULICIUS, E.; K. KULDOVA; A. HOSPODKOVA; J. PANGRAC; F. DOMINEC; Josef HUMLÍČEK; I. PELANT; O. CIBULKA a K. HERYNKOVA. MOVPE GaN/AlGaN HEMT NANO-STRUCTURES. Online. In 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2018 (R)). SLEZSKA: TANGER LTD, 2019, s. 30-35. ISBN 978-80-87294-89-5.

@inproceedings{1649138,
   author = {Hulicius, E. and Kuldova, K. and Hospodkova, A. and Pangrac, J. and Dominec, F. and Humlíček, Josef and Pelant, I. and Cibulka, O. and Herynkova, K.},
   address = {SLEZSKA},
   booktitle = {10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2018 (R))},
   keywords = {HEMT; MOVPE; nitrides; quantum well},
   howpublished = {elektronická verze "online"},
   language = {eng},
   location = {SLEZSKA},
   isbn = {978-80-87294-89-5},
   pages = {30-35},
   publisher = {TANGER LTD},
   title = {MOVPE GaN/AlGaN HEMT NANO-STRUCTURES},
   url = {https://www.nanocon.eu/cz/o-konferenci-historie-sborniky-foto/2018/},
   year = {2019}
}

TY  - CONF
ID  - 1649138
AU  - Hulicius, E. - Kuldova, K. - Hospodkova, A. - Pangrac, J. - Dominec, F. - Humlíček, Josef - Pelant, I. - Cibulka, O. - Herynkova, K.
PY  - 2019
TI  - MOVPE GaN/AlGaN HEMT NANO-STRUCTURES
PB  - TANGER LTD
CY  - SLEZSKA
SN  - 9788087294895
KW  - HEMT
KW  - MOVPE
KW  - nitrides
KW  - quantum well
UR  - https://www.nanocon.eu/cz/o-konferenci-historie-sborniky-foto/2018/
L2  - https://www.nanocon.eu/cz/o-konferenci-historie-sborniky-foto/2018/
N2  - GaN/AlGaN-based high electron mobility transistors (HEMTs) attain better performance than their state-of-the-art full silicon-based counterparts, offering higher power, higher frequency as well as higher temperature of operation and stability, although their voltage and current limits are somewhat lower than for the SiC-based HEMTs. GaN/AlGaN-based HEMTs are a potential choice for electric-powered vehicles, for which they are approved not only for their power parameters, but also for their good temperature stability, lifetime and reliability. It is important to optimize HEMT structures and their growth parameters to reach the optimum function for the real-world applications. HEMT structures described and discussed here were grown by MOVPE technology in AIXTRON apparatus on (111)-oriented single-surface polished 6" Si substrates. Structural, optical and transport properties of the structures were measured by X-ray diffraction, optical reflectivity, time-resolved photoluminescence and mu-Raman spectroscopy.
ER  -

HULICIUS, E.; K. KULDOVA; A. HOSPODKOVA; J. PANGRAC; F. DOMINEC; Josef HUMLÍČEK; I. PELANT; O. CIBULKA a K. HERYNKOVA. MOVPE GaN/AlGaN HEMT NANO-STRUCTURES. Online. In \textit{10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH \&{}amp; APPLICATION (NANOCON 2018 (R))}. SLEZSKA: TANGER LTD, 2019, s.~30-35. ISBN~978-80-87294-89-5.

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