2020
Synthesis of Nanomaterials and Nanostructures
KAUSHIK, PreetiZákladní údaje
Originální název
Synthesis of Nanomaterials and Nanostructures
Autoři
KAUSHIK, Preeti
Vydání
1st edition. Boca Raton, Chemical Methods for Processing Nanomaterials, od s. 38-47, 10 s. 2020
Nakladatel
CRC Press-Taylor & Francis group
Další údaje
Jazyk
angličtina
Typ výsledku
Kapitola resp. kapitoly v odborné knize
Utajení
není předmětem státního či obchodního tajemství
Forma vydání
paměťový nosič (CD, DVD, flash disk)
Odkazy
Organizační jednotka
Přírodovědecká fakulta
ISBN
978-0-367-08588-9
Klíčová slova anglicky
carbon nanotubes, catalytic, plasma, nanoparticles, sol-gel, liquid phase, colloidal, lithography, resist, mask, etching, patterning, proximity effect
Štítky
Příznaky
Mezinárodní význam, Recenzováno
Změněno: 6. 8. 2020 11:54, Preeti Kaushik, Ph.D.
Anotace
V originále
This chapter discusses about the synthesis of nanomaterials and nanostructures. These are prepared by two main approaches: Bottom-up and top-down approach. Bottom up approach describes the synthesis of nanomaterials from small scale to larger scale. Carbon nanotubes synthesis by chemical vapor deposition technique and nanoparticle synthesis using liquid phase synthesis, colloidal method, sol-gel method, hydrothermal synthesis and polyol method comes under bottom-up approach. Conventional carbon nanotube synthesis methods like arc discharge and laser ablation require high temperature for their production. Chemical vapor deposition has been a promising method for carbon nanotube growth in term of their quality and production, Growth mechanism for carbon nanotubes is still an ongoing research based on their growth and pre-treatment conditions. Unlike, top-down approach involves breaking up from larger scale to smaller scale. Lithography is typical example of top-down approach. Photolithography involves the transferring of pattern from mask to the substrate. The typical range of patterning is 100 nm for photolithography while electron-beam lithography can fabricate strcutures even below 10 nm.