| MURPHY-ARMANDO, Felipe, Moritz BREHM, Petr STEINDL, Mark LUSK, T. FROMHERZ, Karlheinz SCHWARZ a Peter BLAHA. Light emission from direct band gap germanium containing split-interstitial defects. Physical Review B. The American Physical Society, 2021, roč. 103, č. 8, s. "085310-1"-"085310-11", 11 s. ISSN 2469-9950. Dostupné z: https://dx.doi.org/10.1103/PhysRevB.103.085310. |
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@article{1752879,
author = {MurphyandArmando, Felipe and Brehm, Moritz and Steindl, Petr and Lusk, Mark and Fromherz, T. and Schwarz, Karlheinz and Blaha, Peter},
article_number = {8},
doi = {http://dx.doi.org/10.1103/PhysRevB.103.085310},
keywords = {Spontaneous emission; k dot p method; Electronic structure; first-principles calculations; interstitials},
language = {eng},
issn = {2469-9950},
journal = {Physical Review B},
title = {Light emission from direct band gap germanium containing split-interstitial defects},
url = {https://doi.org/10.1103/PhysRevB.103.085310},
volume = {103},
year = {2021}
}
TY - JOUR
ID - 1752879
AU - Murphy-Armando, Felipe - Brehm, Moritz - Steindl, Petr - Lusk, Mark - Fromherz, T. - Schwarz, Karlheinz - Blaha, Peter
PY - 2021
TI - Light emission from direct band gap germanium containing split-interstitial defects
JF - Physical Review B
VL - 103
IS - 8
SP - "085310-1"-"085310-11"
EP - "085310-1"-"085310-11"
PB - The American Physical Society
SN - 24699950
KW - Spontaneous emission
KW - k dot p method
KW - Electronic structure
KW - first-principles calculations
KW - interstitials
UR - https://doi.org/10.1103/PhysRevB.103.085310
N2 - The lack of useful and cost-efficient group-IV direct band gap light emitters still presents the main bottle-neck for complementary metal-oxide semiconductor-compatible short-distance data transmission, single-photon emission, and sensing based on silicon photonics. Germanium, a group-IV element like Si, is already widely used in silicon fabs. While the energy band gap of Ge is intrinsically indirect, we predict that the insertion of Ge-Ge split-[110] interstitials into crystalline Ge can open up a direct band gap transmission path. Here, we calculate from first principles the band structure and optical emission properties of Ge, Sb, and Sn split-[110] interstitials in bulk and low-dimensional Ge at different doping concentrations. Two types of electronic states provide the light-emission enhancement below the direct band gap of Ge: a hybridized L-Gamma state at the Brillouin zone center and a conduction band of Delta band character that couples to a raised valence band along the Gamma-X direction. Majority carrier introduced to the system through doping can enhance light emission by saturation of nonradiative paths. Ge-Sn split interstitials in Ge shift the top of the valence band towards the Gamma-X direction and increase the Gamma character of the L-Gamma state, which results in a shift to longer emission wavelengths. Key spectral regions for datacom and sensing applications can be covered by applying quantum confinement in defect-enhanced Ge quantum dots for an emission wavelength shift from the midinfrared to the telecom regime.
ER -
MURPHY-ARMANDO, Felipe, Moritz BREHM, Petr STEINDL, Mark LUSK, T. FROMHERZ, Karlheinz SCHWARZ a Peter BLAHA. Light emission from direct band gap germanium containing split-interstitial defects. \textit{Physical Review B}. The American Physical Society, 2021, roč.~103, č.~8, s.~''085310-1''-''085310-11'', 11 s. ISSN~2469-9950. Dostupné z: https://dx.doi.org/10.1103/PhysRevB.103.085310.
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