| STRÁNSKÁ, Jana, Lukáš HORÁK, Peter MINÁRIK, Václav HOLÝ, Ewa GRZANKA, Jaroslaw DOMAGALA a Michal LESZCZYŃSKI. Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations. Journal of Applied Crystallography. Chester: International Union of Crystallography, 2021, roč. 54, February, s. 62-71. ISSN 0021-8898. Dostupné z: https://dx.doi.org/10.1107/S1600576720014764. |
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@article{1752958,
author = {Stránská, Jana and Horák, Lukáš and Minárik, Peter and Holý, Václav and Grzanka, Ewa and Domagala, Jaroslaw and Leszczyński, Michal},
article_location = {Chester},
article_number = {February},
doi = {http://dx.doi.org/10.1107/S1600576720014764},
keywords = {V-pits; X-ray diffraction; InGaN; reciprocal space maps; strain},
language = {eng},
issn = {0021-8898},
journal = {Journal of Applied Crystallography},
title = {Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations},
url = {https://doi.org/10.1107/S1600576720014764},
volume = {54},
year = {2021}
}
TY - JOUR
ID - 1752958
AU - Stránská, Jana - Horák, Lukáš - Minárik, Peter - Holý, Václav - Grzanka, Ewa - Domagala, Jaroslaw - Leszczyński, Michal
PY - 2021
TI - Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations
JF - Journal of Applied Crystallography
VL - 54
IS - February
SP - 62-71
EP - 62-71
PB - International Union of Crystallography
SN - 00218898
KW - V-pits
KW - X-ray diffraction
KW - InGaN
KW - reciprocal space maps
KW - strain
UR - https://doi.org/10.1107/S1600576720014764
N2 - V-pit defects in InGaN/GaN were studied by numerical simulations of the strain field and X-ray diffraction (XRD) reciprocal space maps. The results were compared with XRD and scanning electron microscopy (SEM) experimental data collected from a series of samples grown by metal-organic vapor phase epitaxy. Analysis of the principal strains and their directions in the vicinity of V-pits explains the pseudomorphic position of the InGaN epilayer peak observed by X-ray diffraction reciprocal space mapping. The top part of the InGaN layer involving V-pits relieves the strain by elastic relaxation. Plastic relaxation by misfit dislocations is not observed. The creation of the V-pits appears to be a sufficient mechanism for strain relaxation in InGaN/GaN epilayers.
ER -
STRÁNSKÁ, Jana, Lukáš HORÁK, Peter MINÁRIK, Václav HOLÝ, Ewa GRZANKA, Jaroslaw DOMAGALA a Michal LESZCZY$\backslash$'NSKI. Strain relaxation in InGaN/GaN epilayers by formation of V-pit detects studied by SEM, XRD and numerical simulations. \textit{Journal of Applied Crystallography}. Chester: International Union of Crystallography, 2021, roč.~54, February, s.~62-71. ISSN~0021-8898. Dostupné z: https://dx.doi.org/10.1107/S1600576720014764.
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