Další formáty:
BibTeX
LaTeX
RIS
@article{1791754, author = {Prokeš, Lubomír and Gorylová, Magdaléna and Šraitrová, Kateřina Čermák and Nazabal, Virginie and Havel, Josef and Němec, Petr}, article_number = {27}, doi = {http://dx.doi.org/10.1021/acsomega.1c01892}, keywords = {Thin films; Pulsed laser deposition; Layers; Cluster chemistry; Lasers}, language = {eng}, issn = {2470-1343}, journal = {ACS Omega}, title = {Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition}, url = {https://doi.org/10.1021/acsomega.1c01892}, volume = {6}, year = {2021} }
TY - JOUR ID - 1791754 AU - Prokeš, Lubomír - Gorylová, Magdaléna - Šraitrová, Kateřina Čermák - Nazabal, Virginie - Havel, Josef - Němec, Petr PY - 2021 TI - Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition JF - ACS Omega VL - 6 IS - 27 SP - 17483-17491 EP - 17483-17491 PB - American Chemical Society SN - 24701343 KW - Thin films KW - Pulsed laser deposition KW - Layers KW - Cluster chemistry KW - Lasers UR - https://doi.org/10.1021/acsomega.1c01892 N2 - Pulsed UV laser deposition was exploited for the preparation of thin Sn50-xAsxSe50 (x = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition method results in growth of a highly (h00) oriented orthorhombic SnSe phase. The thin films were characterized by different techniques such as X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectroscopy, atomic force microscopy, Raman scattering spectroscopy, and spectroscopic ellipsometry. From the results, it can be concluded that thin films containing 0.5 atom % of As exhibited extreme values regarding crystallite size, unit cell volume, or refractive index that significantly differ from those of other samples. Laser ablation with quadrupole ion trap time-of-flight mass spectrometry was used to identify and compare species present in the plasma originating from the interaction of a laser pulse with solid-state Sn50-xAsxSe50 materials in both forms, i.e. parent powders as well as deposited thin films. The mass spectra of both materials were similar; particularly, signals of SnmSen+ clusters with low m and n values were observed. ER -
PROKEŠ, Lubomír, Magdaléna GORYLOVÁ, Kateřina Čermák ŠRAITROVÁ, Virginie NAZABAL, Josef HAVEL a Petr NĚMEC. Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition. \textit{ACS Omega}. American Chemical Society, 2021, roč.~6, č.~27, s.~17483-17491. ISSN~2470-1343. Dostupné z: https://dx.doi.org/10.1021/acsomega.1c01892.
|