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@article{1791754,
author = {Prokeš, Lubomír and Gorylová, Magdaléna and Šraitrová, Kateřina Čermák and Nazabal, Virginie and Havel, Josef and Němec, Petr},
article_number = {27},
doi = {http://dx.doi.org/10.1021/acsomega.1c01892},
keywords = {Thin films; Pulsed laser deposition; Layers; Cluster chemistry; Lasers},
language = {eng},
issn = {2470-1343},
journal = {ACS Omega},
title = {Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition},
url = {https://doi.org/10.1021/acsomega.1c01892},
volume = {6},
year = {2021}
}
TY - JOUR
ID - 1791754
AU - Prokeš, Lubomír - Gorylová, Magdaléna - Šraitrová, Kateřina Čermák - Nazabal, Virginie - Havel, Josef - Němec, Petr
PY - 2021
TI - Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition
JF - ACS Omega
VL - 6
IS - 27
SP - 17483-17491
EP - 17483-17491
PB - American Chemical Society
SN - 24701343
KW - Thin films
KW - Pulsed laser deposition
KW - Layers
KW - Cluster chemistry
KW - Lasers
UR - https://doi.org/10.1021/acsomega.1c01892
N2 - Pulsed UV laser deposition was exploited for the preparation of thin Sn50-xAsxSe50 (x = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition method results in growth of a highly (h00) oriented orthorhombic SnSe phase. The thin films were characterized by different techniques such as X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectroscopy, atomic force microscopy, Raman scattering spectroscopy, and spectroscopic ellipsometry. From the results, it can be concluded that thin films containing 0.5 atom % of As exhibited extreme values regarding crystallite size, unit cell volume, or refractive index that significantly differ from those of other samples. Laser ablation with quadrupole ion trap time-of-flight mass spectrometry was used to identify and compare species present in the plasma originating from the interaction of a laser pulse with solid-state Sn50-xAsxSe50 materials in both forms, i.e. parent powders as well as deposited thin films. The mass spectra of both materials were similar; particularly, signals of SnmSen+ clusters with low m and n values were observed.
ER -
PROKEŠ, Lubomír, Magdaléna GORYLOVÁ, Kateřina Čermák ŠRAITROVÁ, Virginie NAZABAL, Josef HAVEL a Petr NĚMEC. Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition. \textit{ACS Omega}. American Chemical Society, 2021, roč.~6, č.~27, s.~17483-17491. ISSN~2470-1343. Dostupné z: https://dx.doi.org/10.1021/acsomega.1c01892.
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