Nanoimaging of Orientational Defects in Semiconducting Organic
Films

J 2021

Nanoimaging of Orientational Defects in Semiconducting Organic Films

MRKYVKOVA, Nada; Adrian CERNESCU; Zdenek FUTERA; Alois NEBOJSA; Adam DUBROKA et al.

Základní údaje

Originální název

Nanoimaging of Orientational Defects in Semiconducting Organic Films

Autoři

MRKYVKOVA, Nada; Adrian CERNESCU; Zdenek FUTERA; Alois NEBOJSA; Adam DUBROKA; Michaela SOJKOVA; Martin HULMAN; Eva MAJKOVA; Matej JERGEL; Peter SIFFALOVIC a Frank SCHREIBER

Vydání

Journal of Physical Chemistry C, Washington D.C. American Chemical Society, 2021, 1932-7447

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 4.177

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/21:00119566

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

Molecular properties; Defects; Layers; Molecules; Oscillation

Štítky

14312020, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 14. 1. 2022 15:52, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

The development of defect analysis for inorganic semiconductors in the past century paved the way for the success story of today's electronics. By analogy, defect analysis plays a critical role in developing and improving devices based on organic molecular semiconductors. However, because of weak molecular interactions, absent in inorganic semiconductors, device-relevant thin organic films are susceptible to the formation of defects in the molecular orientation, which in turn have a profound impact on the performance in the optoelectronic applications. To address this problem, we broaden the applicability of scattering-type scanning near-field optical microscopy (s-SNOM) and utilize the light-induced anisotropic response of vibrational modes to reveal the defects in molecular orientation. We show that in the case of molecular islands with steep crystal facets only the scattered s-SNOM optical amplitude can be exploited to describe the molecular arrangement reliably, while the phase-based analysis leads to artifacts. The presented s-SNOM analysis of molecular defects can be universally applied to diverse topographies, even at the nanoscale.

Návaznosti

GA20-10377S, projekt VaV

Název: Jevy v heterostrukturách oxidů přechodových kovů vyvolané dopováním a rozhraním (Akronym: TMO Heterostructures)

Investor: Grantová agentura ČR, Jevy v heterostrukturách oxidů přechodových kovů vyvolané dopováním a rozhraním

LM2018140, projekt VaV

Název: e-Infrastruktura CZ (Akronym: e-INFRA CZ)

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, e-Infrastruktura CZ

90110, velká výzkumná infrastruktura

Název: CzechNanoLab

Citovat

MRKYVKOVA, Nada; Adrian CERNESCU; Zdenek FUTERA; Alois NEBOJSA; Adam DUBROKA; Michaela SOJKOVA; Martin HULMAN; Eva MAJKOVA; Matej JERGEL; Peter SIFFALOVIC a Frank SCHREIBER. Nanoimaging of Orientational Defects in Semiconducting Organic Films. Journal of Physical Chemistry C. Washington D.C.: American Chemical Society, 2021, roč. 125, č. 17, s. 9229-9235. ISSN 1932-7447. Dostupné z: https://doi.org/10.1021/acs.jpcc.1c00059.

@article{1821618,
   author = {Mrkyvkova, Nada and Cernescu, Adrian and Futera, Zdenek and Nebojsa, Alois and Dubroka, Adam and Sojkova, Michaela and Hulman, Martin and Majkova, Eva and Jergel, Matej and Siffalovic, Peter and Schreiber, Frank},
   article_location = {Washington D.C.},
   article_number = {17},
   doi = {https://doi.org/10.1021/acs.jpcc.1c00059},
   keywords = {Molecular properties; Defects; Layers; Molecules; Oscillation},
   language = {eng},
   issn = {1932-7447},
   journal = {Journal of Physical Chemistry C},
   title = {Nanoimaging of Orientational Defects in Semiconducting Organic Films},
   url = {https://pubs.acs.org/doi/10.1021/acs.jpcc.1c00059},
   volume = {125},
   year = {2021}
}

TY  - JOUR
ID  - 1821618
AU  - Mrkyvkova, Nada - Cernescu, Adrian - Futera, Zdenek - Nebojsa, Alois - Dubroka, Adam - Sojkova, Michaela - Hulman, Martin - Majkova, Eva - Jergel, Matej - Siffalovic, Peter - Schreiber, Frank
PY  - 2021
TI  - Nanoimaging of Orientational Defects in Semiconducting Organic Films
JF  - Journal of Physical Chemistry C
VL  - 125
IS  - 17
SP  - 9229-9235
EP  - 9229-9235
PB  - American Chemical Society
SN  - 19327447
KW  - Molecular properties
KW  - Defects
KW  - Layers
KW  - Molecules
KW  - Oscillation
UR  - https://pubs.acs.org/doi/10.1021/acs.jpcc.1c00059
N2  - The development of defect analysis for inorganic semiconductors in the past century paved the way for the success story of today's electronics. By analogy, defect analysis plays a critical role in developing and improving devices based on organic molecular semiconductors. However, because of weak molecular interactions, absent in inorganic semiconductors, device-relevant thin organic films are susceptible to the formation of defects in the molecular orientation, which in turn have a profound impact on the performance in the optoelectronic applications. To address this problem, we broaden the applicability of scattering-type scanning near-field optical microscopy (s-SNOM) and utilize the light-induced anisotropic response of vibrational modes to reveal the defects in molecular orientation. We show that in the case of molecular islands with steep crystal facets only the scattered s-SNOM optical amplitude can be exploited to describe the molecular arrangement reliably, while the phase-based analysis leads to artifacts. The presented s-SNOM analysis of molecular defects can be universally applied to diverse topographies, even at the nanoscale.
ER  -

MRKYVKOVA, Nada; Adrian CERNESCU; Zdenek FUTERA; Alois NEBOJSA; Adam DUBROKA; Michaela SOJKOVA; Martin HULMAN; Eva MAJKOVA; Matej JERGEL; Peter SIFFALOVIC a Frank SCHREIBER. Nanoimaging of Orientational Defects in Semiconducting Organic Films. \textit{Journal of Physical Chemistry C}. Washington D.C.: American Chemical Society, 2021, roč.~125, č.~17, s.~9229-9235. ISSN~1932-7447. Dostupné z: https://doi.org/10.1021/acs.jpcc.1c00059.

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