2022
Germanium-antimony-selenium-tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements
HUANG, Fei, Tomáš HALENKOVIČ, Marion BAILLIEUL, Virginie NAZABAL, Petr NĚMEC et. al.Základní údaje
Originální název
Germanium-antimony-selenium-tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements
Autoři
HUANG, Fei (156 Čína, domácí), Tomáš HALENKOVIČ, Marion BAILLIEUL, Virginie NAZABAL, Petr NĚMEC a Josef HAVEL (203 Česká republika, garant, domácí)
Vydání
Journal of the American Ceramic Society, Wiley, 2022, 0002-7820
Další údaje
Jazyk
angličtina
Typ výsledku
Článek v odborném periodiku
Obor
20501 Materials engineering
Stát vydavatele
Spojené státy
Utajení
není předmětem státního či obchodního tajemství
Odkazy
Impakt faktor
Impact factor: 3.900
Kód RIV
RIV/00216224:14310/22:00125350
Organizační jednotka
Přírodovědecká fakulta
UT WoS
000722554000001
Klíčová slova anglicky
amorphous chalcogenides; clusters; Ge-Sb-Se-Te; laser ablation; magnetron sputtering; mass spectrometry; thin films
Štítky
Příznaky
Mezinárodní význam, Recenzováno
Změněno: 9. 2. 2022 10:33, Mgr. Marie Šípková, DiS.
Anotace
V originále
Quaternary germanium-antimony-selenium-tellurium (Ge-Sb-Se-Te) thin films deposited from Ge19.4Sb16.7Se63.9-xTex (x = 5, 10, 15, and 20) glass-ceramics targets by radio frequency magnetron sputtering were studied using laser ablation quadrupole ion trap time of flight mass spectrometry. Binary, ternary, and quaternary GeaSbbSecTed clusters were formed and their stoichiometry was determined. By comparison of the clusters obtained from quaternary Ge-Sb-Se-Te thin films and those from ternary Ge-Sb-Te materials, we found that Ge-Te species are not detected from the quaternary system. Furthermore, Ge-Se and Se-Te species are missing in mass spectra generated from Ge-Sb-Se-Te thin films. From the Ge-Sb-Se-Te thin films, 16 clusters were detected while ternary Ge-Sb-Se glasses yielded 26 species. This might be considered as a signal of higher stability of Ge-Sb-Se-Te thin films which is increasing with a higher content of Te. The missing (Se-2(+), GeaSb+ (a = 1-4), and GeSec+ (c = 1, 2)) and new (Ge+ and SbbTe+ (b = 1-3)) clusters may indicate that some of the structural features of the films (Ge2Se6/2 and Se2Sb-SbSe2) were replaced by (GeSe4-x,Te-x and SbSe3-xTex) ones. In addition, when comparing the stoichiometry of clusters formed from Ge-Sb-Se-Te thin films with those from the mixtures of the elements, only Sb-3(+) and SbSe+ were observed in both cases. The knowledge gained concerning clusters stoichiometry contributes to the elucidation of the processes proceeding during plasma formation used for the chalcogenide thin films deposition.
Návaznosti
MUNI/A/1390/2020, interní kód MU |
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