| HUMLÍČEK, Josef, R. HENN a M. CARDONA. Far-infrared Ellipsometry of Depleted Surface Layer in Heavily Doped N-type GaAs. Appl. Phys. Lett. USA: Institute of Physics, 1996, roč. 69(1996), č. 17, s. 2581-2583. ISSN 0003-6951. |
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@article{197465,
author = {Humlíček, Josef and Henn, R. and Cardona, M.},
article_location = {USA},
article_number = {17},
language = {eng},
issn = {0003-6951},
journal = {Appl. Phys. Lett.},
title = {Far-infrared Ellipsometry of Depleted Surface Layer in Heavily Doped N-type GaAs},
volume = {69(1996)},
year = {1996}
}
TY - JOUR
ID - 197465
AU - Humlíček, Josef - Henn, R. - Cardona, M.
PY - 1996
TI - Far-infrared Ellipsometry of Depleted Surface Layer in Heavily Doped N-type GaAs
JF - Appl. Phys. Lett.
VL - 69(1996)
IS - 17
SP - 2581
EP - 2581
PB - Institute of Physics
SN - 00036951
ER -
HUMLÍČEK, Josef, R. HENN a M. CARDONA. Far-infrared Ellipsometry of Depleted Surface Layer in Heavily Doped N-type GaAs. \textit{Appl. Phys. Lett.}. USA: Institute of Physics, 1996, roč.~69(1996), č.~17, s.~2581-2583. ISSN~0003-6951.
|
