HUMLÍČEK, Josef, R. HENN and M. CARDONA. Far-infrared Ellipsometry of Depleted Surface Layer in Heavily Doped N-type GaAs. Appl. Phys. Lett. USA: Institute of Physics, 1996, 69(1996), No 17, p. 2581-2583. ISSN 0003-6951.
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Basic information
Original name Far-infrared Ellipsometry of Depleted Surface Layer in Heavily Doped N-type GaAs
Authors HUMLÍČEK, Josef, R. HENN and M. CARDONA.
Edition Appl. Phys. Lett. USA, Institute of Physics, 1996, 0003-6951.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
RIV identification code RIV/00216224:14310/96:00000416
Organization unit Faculty of Science
UT WoS A1996VN89800044
Changed by Changed by: prof. RNDr. Josef Humlíček, CSc., učo 307. Changed: 29/2/2000 16:36.
Links
MSM 143100002, plan (intention)Name: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical properties of new materials and layered structures
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