| PAVELKA, Radek, Jan HLÁVKA, Ivan OHLÍDAL a Helmut SITTER. Optical parameter analysis of thin absorbing films measured by the photovoltage method. Acta physica polonica A. Jaszowiec, Polsko: Intern.School on Physics of Semicond.Com, 1998, roč. 94, č. 3, s. 468-472. |
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@article{200286,
author = {Pavelka, Radek and Hlávka, Jan and Ohlídal, Ivan and Sitter, Helmut},
article_location = {Jaszowiec, Polsko},
article_number = {3},
language = {eng},
journal = {Acta physica polonica A},
title = {Optical parameter analysis of thin absorbing films measured by the photovoltage method},
volume = {94},
year = {1998}
}
TY - JOUR
ID - 200286
AU - Pavelka, Radek - Hlávka, Jan - Ohlídal, Ivan - Sitter, Helmut
PY - 1998
TI - Optical parameter analysis of thin absorbing films measured by the photovoltage method
JF - Acta physica polonica A
VL - 94
IS - 3
SP - 468
EP - 468
PB - Intern.School on Physics of Semicond.Com
N2 - A special method for measuring the optical parameters of thin absorbing films is presented. Within the method the radiation transmitted through the layer is measured. The transmitted radiation is detected by the space charge region which is located in the substrate at the interface with the layer. The space charge region acts as a photodetector placed just behind the layer. In this paper the method is applied to characterize a system of an absorbing ZnSe film on a GaAs substrate. The values of the optical parameters of the film are evaluated. This means that the value of the thickness and the spectral dependences of both the refractive index and extinction coefficient are determined. The spectral dependences of both optical constants are determined in the visible range. Finally, the comparison of our results obtained by this method with the results obtained from ellipsometric and reflectance measurements is presented.
ER -
PAVELKA, Radek, Jan HLÁVKA, Ivan OHLÍDAL a Helmut SITTER. Optical parameter analysis of thin absorbing films measured by the photovoltage method. \textit{Acta physica polonica A}. Jaszowiec, Polsko: Intern.School on Physics of Semicond.Com, 1998, roč.~94, č.~3, s.~468-472.
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