HOLÝ, Václav, A.A. DARHUBER, J. STANGL, G. BAUER, J. NUTZEL and G. ABSTREITER. X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers. Semicond. Sci. Technol. UK: Publishing Ltd, 1998, 13(1998), -, p. 590-598. ISSN 0268-1242.
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Basic information
Original name X-ray reflectivity investigations of the interface morphology in strained SiGe/Si multilayers
Authors HOLÝ, Václav, A.A. DARHUBER, J. STANGL, G. BAUER, J. NUTZEL and G. ABSTREITER.
Edition Semicond. Sci. Technol. UK, Publishing Ltd, 1998, 0268-1242.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United Kingdom of Great Britain and Northern Ireland
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 1.338
RIV identification code RIV/00216224:14310/98:00000030
Organization unit Faculty of Science
UT WoS 000074143200008
Keywords in English x-ray
Tags x-ray
Changed by Changed by: prof. RNDr. Václav Holý, CSc., učo 1656. Changed: 18/4/2000 10:19.
Links
GA202/97/0003, research and development projectName: Morfologie rozhraní heteroepitaxních multivrstev
Investor: Czech Science Foundation, The morfology of the interfaces in heteroepitaxial multilayers
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