DARHUBER, A.A., Václav HOLÝ, J. STANGL, Petr MIKULÍK, K. BRUNNER, G. ABSTREITER and G. BAUER. Highly regular self-organization of step bunches during growth of SiGe on Si(113). Appl. Phys. Lett. USA: Institute of Physics, 1998, 73(1998), -, p. 1535-1537. ISSN 0003-6951.
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Basic information
Original name Highly regular self-organization of step bunches during growth of SiGe on Si(113)
Authors DARHUBER, A.A. (276 Germany), Václav HOLÝ (203 Czech Republic), J. STANGL (276 Germany), Petr MIKULÍK (203 Czech Republic, guarantor), K. BRUNNER (276 Germany), G. ABSTREITER (276 Germany) and G. BAUER (276 Germany).
Edition Appl. Phys. Lett. USA, Institute of Physics, 1998, 0003-6951.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 3.349
RIV identification code RIV/00216224:14310/98:00000031
Organization unit Faculty of Science
Keywords (in Czech) self-organizace; SiGe; rtg difrakce
Keywords in English self-organization of step bunches; growth; SiGe; x-ray diffraction
Tags International impact, Reviewed
Changed by Changed by: doc. RNDr. Petr Mikulík, Ph.D., učo 855. Changed: 15/1/2010 15:10.
Links
GA202/97/0003, research and development projectName: Morfologie rozhraní heteroepitaxních multivrstev
Investor: Czech Science Foundation, The morfology of the interfaces in heteroepitaxial multilayers
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